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Method for manufacturing array substrate and array substrate

A technology of an array substrate and a manufacturing method, which is applied in the display field, can solve problems such as the weakening of the insulating effect of the insulating layer, and achieve the effects of improving the insulating effect, improving the weakening of the insulating effect, and reducing the film-forming time

Active Publication Date: 2021-06-11
HKC CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] When the film-forming time of the insulating layer is reduced, that is, when the deposition rate of the insulating layer is increased, a large number of Si-H bonds will be generated, resulting in the weakening of the insulating effect of the insulating layer. How to reduce the film-forming time of the insulating layer while ensuring the insulating effect is a problem to be solved

Method used

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  • Method for manufacturing array substrate and array substrate
  • Method for manufacturing array substrate and array substrate
  • Method for manufacturing array substrate and array substrate

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Embodiment Construction

[0042] It should be understood that the terminology and specific structural and functional details disclosed herein are representative only for describing specific embodiments, but the application can be embodied in many alternative forms and should not be construed as merely Be limited by the examples set forth herein.

[0043] In the description of the present application, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating relative importance, or implicitly indicating the quantity of indicated technical features. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of these features; "plurality" means two or more. The term "comprising" and any variations thereof mean non-exclusive inclusion, possible presence or addition of one or more other features, integers, steps, operations, units, components and / or combinations thereof.

[0044] Al...

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Abstract

The present application discloses a method for manufacturing an array substrate and the array substrate. The method for manufacturing the array substrate includes sequentially depositing a substrate, a gate layer, at least two gate insulating layers with different deposition rates, a semiconductor layer, and source and drain electrodes; The source and drain electrodes and the insulating layer not covered by the semiconductor layer are fed with nitrogen gas and ammonia gas, and plasma treatment is performed on the fed gas at the same time. In this application, on the basis of reducing the film formation time and increasing the production capacity by making the gate insulating layer into multiple layers at different deposition rates, nitrogen and ammonia gas plasmas are introduced after the source and drain electrodes are formed to achieve the improvement of the gate electrode. The insulating effect of the insulating layer improves the problem of weakening the insulating effect caused by the delamination of the gate insulating layer.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a method for manufacturing an array substrate and the array substrate. Background technique [0002] Liquid crystal display (TFT-LCD) has gradually occupied a dominant position in the display field due to its low power consumption, excellent picture quality, and high production yield. As the main medium for transmitting information, liquid crystal displays have been widely used in various fields of work and life. But few people know that the seemingly simple LCD panel requires hundreds of processes to make. The liquid crystal display includes a display panel and a backlight module, and the display panel includes a color filter substrate and a thin film transistor array substrate. [0003] When the film-forming time of the insulating layer is reduced, that is, when the deposition rate of the insulating layer is increased, a large number of Si-H bonds will be generated...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L27/12
Inventor 卓恩宗刘振杨凤云莫琼花
Owner HKC CORP LTD