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Plasma jet graphene transparent conductive film substrate preprocessing method

A technology of transparent conductive film and graphene, which is applied to the conductive layer, circuit, and electrical components on the insulating carrier, can solve the problems of high efficiency, low cost, and low process requirements, and achieve high efficiency, convenient operation, and simple implementation Effect

Active Publication Date: 2019-07-02
重庆元石盛石墨烯薄膜产业有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0008] So far, there is still a lack of a graphene transparent conductive film preparation method with low process requirements, high efficiency, low cost, easy control, good quality, and suitable for large-scale production.

Method used

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  • Plasma jet graphene transparent conductive film substrate preprocessing method
  • Plasma jet graphene transparent conductive film substrate preprocessing method
  • Plasma jet graphene transparent conductive film substrate preprocessing method

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Embodiment Construction

[0035] In the following, the present invention will be further described in detail in conjunction with a specific implementation method of a roll-to-roll graphene transparent conductive film continuous preparation method and accompanying drawings.

[0036] A roll-to-roll graphene transparent conductive film continuous preparation method is characterized in that it comprises the following steps carried out successively: a, to transparent film substrates (specifically PET, PEN, PMMA, PC film or PI film etc. film base material) for surface modification pretreatment, cleaning the surface and reducing surface tension, and generating polar groups on the surface; b, continuous coating of multifunctional primer on the surface of film base material to further reduce surface tension The bonding force with the graphene conductive material layer increases the number of its polar groups and adjusts the refractive index; c, coats at least one layer of graphene material layer again, and the g...

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Abstract

The invention discloses a plasma jet graphene transparent conductive film substrate preprocessing method which is characterized in that the porcessing gas such as hydrogen, oxygen, nitrogen or heliumis applied to plasma and eject onto the surface of the substrate through AC electromagnetic field processing so as to perform surface modification preprocessing on the thin film substrate, clean the surface and reduce the surface tension and form polar groups on the surface. A roll-to-roll graphene transparent conductive film continuous preparation method using the preprocessing method is also disclosed. Surface preprocessing of the transparent thin film substrate is realized by using the principle of normal temperature plasma jet, and the preprocessing method has the advantages of simple implementation, convenient operation, convenient control, good preprocessing effect and high efficiency and can improve the adhesion effect of the subsequent functional layer of the thin film substrate.

Description

technical field [0001] The invention belongs to the field of graphene transparent conductive film preparation, and in particular relates to a plasma jet type graphene transparent conductive film base material pretreatment method. Background technique [0002] Graphene is an ideal photonic and optoelectronic material. Graphene transparent conductive film can be widely used in the fields of mobile phones, tablet computers and touch screen devices. It is a very widely used basic material in the electronics industry. [0003] The existing conventional graphene transparent conductive film preparation method is generally the CVD method. It is necessary to grow a graphene film on the copper foil first, then apply a layer of organic glass protective layer, and then dissolve the copper foil to transfer the graphene film. To the surface of the film substrate, and then remove the plexiglass protective layer. This preparation method has harsh process conditions; complex operation proce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/00
Inventor 王昉蒋彦吴德操彭格余政霖徐化力王永禄冉超志钟朝伦王珩刘先康吴至一王子猷
Owner 重庆元石盛石墨烯薄膜产业有限公司
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