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Perovskite quantum dot and preparation method thereof

A quantum dot and perovskite technology, applied in the field of quantum dots, can solve the problems of poor batch stability and the luminescence purity of perovskite quantum dot materials needs to be improved, and achieve good stability, high luminescence purity and particle size. uniform effect

Inactive Publication Date: 2019-07-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a perovskite quantum dot and a preparation method thereof, aiming at solving the common problem of poor stability between batches of perovskite quantum dot materials synthesized in the prior art, And the luminous purity of perovskite quantum dot materials still needs to be improved

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  • Perovskite quantum dot and preparation method thereof

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Embodiment 1

[0044] This embodiment CsPbCl 3 A method for preparing perovskite quantum dots, comprising the following steps:

[0045] (1) In the glove box, add 2.0 mmol CsCl, 1.3 mL trioctylphosphine, 43 mL octadecene, and 1.8 mL oleylamine into a 100 mL three-necked flask respectively, and stir for 30 min under an inert atmosphere to obtain a suspension state cesium precursor;

[0046] (2) In the glove box, put 2.0 mmol PbCl 2 , 1.5 mL of trioctylphosphine, 43 mL of octadecene, and 1.8 mL of oleylamine were added to a 100 mL three-necked flask, and stirred for 30 min under an inert atmosphere to obtain a lead precursor solution in a suspended state;

[0047] (3) In the glove box, mix the cesium precursor solution and the lead precursor solution evenly to obtain a reaction solution, and transfer the reaction solution to a 100mL polytetrafluoroethylene-lined reactor, and tighten the reactor. Next, the reactor was transferred to a blast oven at 160 °C, and reacted at a constant temperatur...

Embodiment 2

[0050] This embodiment CsPbBr 3 A method for preparing perovskite quantum dots, comprising the following steps:

[0051] (1) In the glove box, put 1.0 mmol Cs 2 CO 3 , 0.65 mL trioctylphosphine, 22 mL octadecene, and 0.9 mL oleylamine were added to a 50 mL three-necked flask respectively, and stirred for 30 min under an inert atmosphere to obtain a cesium precursor solution in a suspended state;

[0052] (2) In the glove box, put 3.0 mmol PbBr 2 , 2.3 mL of trioctylphosphine, 65 mL of octadecene, and 2.7 mL of oleylamine were added to a 100 mL three-necked flask, and stirred for 30 min under an inert atmosphere to obtain a lead precursor solution in a suspended state;

[0053] (3) In the glove box, mix the cesium precursor solution and the lead precursor solution evenly to obtain a reaction solution, and transfer the reaction solution to a 100mL polytetrafluoroethylene-lined reactor, and tighten the reactor. Next, the reactor was transferred to a blast oven at 160 °C, and ...

Embodiment 3

[0056] This example CsPbI 3 A method for preparing perovskite quantum dots, comprising the following steps:

[0057] (1) In the glove box, add 3.0 mmol CsI, 2.0 mL trioctylphosphine, 65 mL octadecene, and 2.7 mL oleylamine into a 100 mL three-necked flask respectively, and stir for 30 min under an inert atmosphere to obtain a suspension state cesium precursor;

[0058] (2) In the glove box, put 1.0 mmol PbI 2 , 0.75 mL of trioctylphosphine, 22 mL of octadecene, and 0.90 mL of oleylamine were added to a 50 mL three-necked flask, and stirred for 30 min under an inert atmosphere to obtain a lead precursor solution in a suspended state;

[0059] (3) In the glove box, mix the cesium precursor solution and the lead precursor solution evenly to obtain a reaction solution, and transfer the reaction solution to a 100mL polytetrafluoroethylene-lined reactor, and tighten the reactor. Next, the reactor was transferred to a blast oven at 160 °C, and reacted at a constant temperature for...

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Abstract

The invention discloses a perovskite quantum dot and a preparation method thereof. The method comprises the steps of: mixing a cesium salt, organic phosphine, a poor solvent and organic amine evenly in an inert atmosphere to obtain a cesium precursor solution; mixing a lead salt, organic phosphine, a poor solvent and organic amine evenly in an inert atmosphere to obtain a lead precursor solution;mixing the cesium precursor solution with the lead precursor solution evenly in an inert atmosphere for nucleation reaction of the cesium ions, lead ions and halide ions dissolved out from the mixed precursor solution to obtain CsPbX3 perovskite quantum dots, the surfaces of which are combined with organic amine, wherein X is Cl, Br or I. Specifically, at least one of the cesium salt and the leadsalt is a metal halide. The CsPbX3 perovskite quantum dot material synthesized by the method has uniform micro-morphology and particle size, high luminescence purity and good batch-to-batch stability,thus being beneficial to application of the material in lighting, photoelectric display and photovoltaic fields.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a perovskite quantum dot and a preparation method thereof. Background technique [0002] Traditional photovoltaic materials have been restricting the development and growth of the photovoltaic industry due to their high cost and low energy conversion rate. In recent years, studies have found that organic-inorganic metal halide perovskite materials have the advantages of high light conversion efficiency, wide luminous spectrum, small hole-electron recombination energy, and high carrier mobility. And biomedical field has broad application prospects. Compared with organic-inorganic metal halide perovskite materials, all-inorganic metal halide perovskite materials exhibit better stability and have broader application prospects. [0003] Quantum dot materials are considered to be new optoelectronic materials with great potential due to their optical characteristics such as wide...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/66B82Y40/00
CPCB82Y40/00C09K11/025C09K11/665
Inventor 丘洁龙
Owner TCL CORPORATION
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