Continuous pulling single crystal silicon growth method

Abstract

The invention provides a continuous pulling monocrystalline silicon growth method, and belongs to the field of semiconductor material preparation, wherein the method comprises the steps of material melting, stabilization, neck guiding, shoulder releasing, shoulder rotating, equal diameter and tail ending, wherein the material melting power is gradually increased and heated in the early stage, thematerial melting power in the medium stage is kept at the stable power, and the material melting power is reduced in the later stage; the rotating directions of crystal rotation and pan rotation are opposite in the stabilization process, the temperature of a thermal field is adjusted to the neck guiding temperature, and a feeding device is kept in a feeding state; the crystal growth speed is reduced in the shoulder releasing process, the feeding device is in the feeding state, and the feeding amount is gradually increased; the shoulder rotating process is increased on the basis of the shoulderreleasing; the given temperature in the early stage of the equal diameter process, and the temperature is controlled, and the temperature is reduced in the early stage. According to the continuous pulling monocrystalline silicon growth method, the feeding amount in the crystal growth crucible can be reduced, the continuous feeding of the monocrystalline furnace is achieved, the secondary feedingtime is reduced, the synchronous feeding and crystal growth are achieved, the initial crystal growth crystal source in the crucible is less, and the resistivity distribution is more uniform.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and more specifically relates to a method for continuously pulling single crystal silicon growth. Background technique [0002] The preparation of single crystal silicon usually includes two main steps of crystal growth and making silicon wafers. With the maturity and development of the photovoltaic industry, solar cells are required to have higher conversion efficiency, which puts forward higher internal quality requirements for crystalline silicon materials, especially the minority carrier lifetime, impurity content, defect density, etc. to measure the internal quality of monocrystalline silicon The core indicators are more stringent. The minority carrier lifetime is directly related to the conversion efficiency of solar cells, and impurities and defects (internal errors, etc.) are the two main factors affecting the minority carrier lifetime. At present, the Czochra...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for continuously pulling monocrystalline silicon growth, so as to solve the technical problems of poor monocrystalline silicon quality and low production efficiency in the CCZ monocrystalline silicon growth technology