Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a method for forming the same, wherein the forming method includes: providing a substrate with a fin column on the substrate, the fin column includes a bottom region, a channel region located on the bottom region, and a channel region located on the bottom region. A top region on the channel region; a first isolation layer is formed on the substrate, and the first isolation layer covers the bottom region of the fin column; and a sidewall surface of the channel region of the fin column is formed a first gate oxide layer and a second gate oxide layer, the second gate oxide layer is located on the top surface of the first gate oxide layer, and the thicknesses of the first gate oxide layer and the second gate oxide layer are different; A gate structure is formed on the top surface of the first isolation layer, and the gate structure covers the first gate oxide layer and the second gate oxide layer; a second isolation layer is formed on the top surface of the gate structure, and the second An isolation layer covers sidewalls of the top region of the fin post. The formation method can improve the performance of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. With the improvement of component density and integration of semiconductor devices, the size of transistors is getting smaller and smaller, and the reduction of transistor size makes the short channel effect more and more significant. [0003] In order to reduce the short channel effect, the fin field effect transistor was born. The gate of the FinFET has a forked 3D structure similar to a fish fin. The gate of the fin field effect transistor can control the switching on and off of the circuit on multiple sides of the fin column, so that the short channel effect of the transistor can be well suppressed. [0004]...

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Problems solved by technology

[0005] However, the performance of existing vertical nanowire transistors is poor

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