A kind of nand device and its manufacturing method, electronic device
A manufacturing method and device technology, applied to semiconductor devices, electric solid devices, circuits, etc., can solve the problems of small feature size, damage, and poor uniformity of feature size of edge word lines, so as to improve uniformity and performance , The effect of overcoming the problem of shrinkage and damage
Active Publication Date: 2021-03-16
SEMICON MFG NORTH CHINA (BEIJING) CORP +2
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] However, as the process enters 2Xnm (such as 20nm) and below, the uniformity of the word line (Word Line) feature size (CD) becomes a problem, and the second word line close to the select gate is prone to feature size reduction and damage. , resulting in poor feature size uniformity of edge word lines
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0038] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals designate like elements throughout.
[0039] It will be understood that when an element or layer is referr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a NAND device, its manufacturing method, and an electronic device. The manufacturing method includes: determining the distance between the first core and the second core in the photolithographic pattern used for double pattern etching of the control gate, wherein the light The engraving pattern includes a plurality of cores arranged at intervals, the first core represents a core adjacent to the selection gate among the plurality of cores, and the second core represents a core adjacent to the first core among the plurality of cores ; designing a photomask according to the determined distance between the first core and the second core; using the photomask to form the photolithographic pattern for double pattern etching of the control gate on the substrate; forming a spacer on the side wall; removing the photolithography pattern; and etching the control gate using the spacer as a mask. The manufacturing method can overcome the problem that the second word line close to the selection gate is prone to shrinkage and damage in the NAND device, thereby improving the uniformity of the characteristic size of the edge word line and improving the performance of the device. The NAND device and electronic device have similar advantages.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, especially a NAND device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor manufacturing technology, flash memory (flash memory) with faster access speed has been developed in terms of storage devices. Flash memory has the characteristics that information can be stored, read, and erased multiple times, and the stored information will not disappear after power failure. Therefore, flash memory has become a popular choice for personal computers and electronic devices. A widely used type of non-volatile memory. However, NAND (NAND gate) fast memory is widely used in fields with high read / write requirements due to its large storage capacity and relatively high performance. [0003] However, as the process enters 2Xnm (such as 20nm) and below, the uniformity of the word...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H10B41/35
CPCH10B41/35
Inventor 张宏黄永彬杨海玩周朝锋周乾
Owner SEMICON MFG NORTH CHINA (BEIJING) CORP