GaAs-based LED (Light Emitting Diode) die manufacturing method

Abstract

The invention relates to a GaAs-based LED (Light Emitting Diode) die manufacturing method comprising the following steps: a) performing back-face thinning on a gallium arsenide-based LED wafer growingwith an epitaxial layer; b) evaporating the thinned GaAs substrate on the back surface of the LED wafer by using an Ni material and an Au material under a normal temperature condition and by means ofan electron beam evaporation platform under a vacuum environment so as to prepare an N-surface electrode; c) placing the wafer in the electron beam evaporation platform, and heating and evaporating the front face of the LED wafer under vacuum adjustment so as to manufacture a layer of cesium chloride thin film; d) manufacturing a P-electrode mask pattern; e) manufacturing an ohmic contact layer and a P electrode; and g) using a saw blade machine to carry out die cutting operation on the LED wafer to obtain a cut die. The manufacturing process of the whole die structure is simple without the need of a corrosion type solution, conventional equipment is used for manufacturing the all, the whole process is simple in operation, low in raw material cost and short in manufacturing steps, and manufacturing of the die can be rapidly realized. The method is suitable for large-scale quantitative production and is in common use in the manufacturing process of the die structures of all the galliumarsenide-based light-emitting diodes.

Description

Technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a method for manufacturing a GaAs-based LED die. Background technique [0002] Light Emitting Diode, or LED (Light Emitting Diode), is a semiconductor device, known as the third-generation lighting source, which can directly convert electrical energy into light energy to emit light. Light-emitting diodes have the following advantages: small size, light weight, easy miniaturization and integration, long life, short response time, and the ability to produce various wavelengths of light, high brightness, and low power consumption. Completely solid-state light-emitting device. [0003] At present, the substrates for making light-emitting diodes are mostly sapphire substrates, silicon substrates, silicon carbide substrates, gallium nitride substrates, gallium arsenide substrates, etc. (1) Sapphire substrate, mature production technology, good device quality; good stability, can be ...

AI Technical Summary

Problems solved by technology

In this invention, the production of the Al layer is first completed, and finally when the N-face alloy is carried out, large pits are easily formed on the surface of the Al layer, which has a great impact on the yield of the entire die.

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