A kind of manufacturing method of GAAS-based LED tube core

Abstract

A method for manufacturing a GaAs-based LED tube core, comprising the following steps: a) thinning the back side of a gallium arsenide-based LED chip with an epitaxial layer; b) thinning the GaAs substrate on the back side of the thinned LED chip Under certain conditions, use an electron beam evaporation table to vapor-deposit Ni and Au materials in a vacuum environment to make N-side electrodes; c) place the wafer in the electron beam evaporation table, and heat and evaporate a layer on the front of the LED wafer under vacuum adjustment. cesium chloride thin film; d) making P electrode mask pattern; e) making ohmic contact layer and P electrode; g) using a saw blade machine to perform die cutting operation on the LED wafer to obtain the divided die. The manufacturing process of the entire die structure is simple, does not require the use of corrosive solutions, and is all manufactured using conventional equipment. The entire process is simple to operate, the cost of raw materials is low, and the manufacturing steps are short. It can quickly realize the manufacture of the die, and is suitable for large Scale and quantitative production is generally applicable to the manufacturing process of the die structure in all gallium arsenide-based light-emitting diodes.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a method for manufacturing a GaAs-based LED tube core. Background technique [0002] Light Emitting Diode, or LED (Light Emitting Diode), is a semiconductor device, known as the third-generation lighting source, which can directly convert electrical energy into light energy, thereby emitting light. Light-emitting diodes have the following advantages: small size, light weight, easy miniaturization and integration, long service life, short response time, and the ability to produce light of various wavelengths, high brightness, and low power consumption. Fully solidified light emitting device. [0003] At present, sapphire substrates, silicon substrates, silicon carbide substrates, gallium nitride substrates, gallium arsenide substrates, etc. are commonly used as substrates for light-emitting diodes. (1) Sapphire substrate, mature production technology, good device quality...

AI Technical Summary

Problems solved by technology

In this invention, the production of the Al layer is first completed, and finally when the N-face alloy is carried out, large pits are easily formed on the surface of the Al layer, which has a great impact on the yield of the entire die.

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