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Cavity type bulk acoustic wave resonator with lower electrode protection layer and preparation method thereof

A technology of bulk acoustic wave resonators and protective layers, which is applied to electrical components, impedance networks, etc., can solve problems affecting device performance, electrode structure damage, etc., and achieve the effect of high quality factor and simple preparation method

Active Publication Date: 2019-07-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] The object of the present invention is to provide a method for preparing a cavity-type bulk acoustic resonator with a lower electrode protective layer and the cavity-type bulk acoustic resonator. By setting the lower electrode to wrap the lower electrode protective layer to solve the existing problems in The etchant of the sacrificial layer will etch the lower electrode material, which will damage the electrode structure and affect the technical problem of device performance.

Method used

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  • Cavity type bulk acoustic wave resonator with lower electrode protection layer and preparation method thereof
  • Cavity type bulk acoustic wave resonator with lower electrode protection layer and preparation method thereof
  • Cavity type bulk acoustic wave resonator with lower electrode protection layer and preparation method thereof

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preparation example Construction

[0049] Such as figure 1 , figure 2 , image 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 As shown, a method for preparing a cavity-type bulk acoustic resonator with a lower electrode protective layer provided by the present invention includes the following steps:

[0050] S1) High-energy ions A are injected from the lower surface of the piezoelectric single-crystal wafer, and the high-energy ions A enter the interior of the piezoelectric single-crystal wafer to form a damaged layer 8, which separates the piezoelectric single-crystal wafer into an upper piezoelectric layer 9 and a single piezoelectric layer 9. crystal thin film layer 2 to obtain a damaged piezoelectric single crystal wafer;

[0051] S2) sequentially prepare a patterned lower electrode 3, a lower electrode protective layer 4 wrapping the lower electrode, a patterned sacrificial layer 10, and a bonding layer 5 covering the sacrificial layer on the lower surface of the damag...

Embodiment 1

[0073] 1) Select a lithium niobate piezoelectric single crystal wafer, and inject high-energy He into the lower surface of the lithium niobate piezoelectric single crystal wafer + , so that a damaged layer is formed inside the lithium niobate piezoelectric single crystal wafer, and the damaged layer separates the lithium niobate piezoelectric single crystal wafer into a lithium niobate upper piezoelectric layer and a lithium niobate single crystal thin film layer; He + The implantation energy is 200keV, and the implantation depth is 0.6μm.

[0074] 2) The lower electrode is prepared on the lower surface of the lithium niobate single crystal thin film layer. The lower electrode can be prepared in two ways. The first method is to coat the lower surface of the lithium niobate single crystal thin film layer with photoresist (Ruihong AZ6212), forming a photoresist layer, using a patterned mask plate (made of chromium) to expose the photoresist, developing with a developer, growing ...

Embodiment 2

[0081] 1) Select a lithium tantalate piezoelectric single crystal wafer, and inject high-energy He into the lower surface of the lithium niobate piezoelectric single crystal wafer + , so that a damaged layer is formed inside the lithium niobate piezoelectric single crystal wafer, and the damaged layer separates the lithium niobate piezoelectric single crystal wafer into a lithium niobate upper piezoelectric layer and a lithium niobate single crystal thin film layer; He + The implantation energy is 500keV, and the implantation depth is 0.6μm.

[0082] 2) The lower electrode is prepared on the lower surface of the lithium tantalate single crystal thin film layer. The lower electrode can be prepared in two ways. The first method is to coat the lower surface of the lithium tantalate thin film layer with photoresist (Ruihong AZ6212), forming a photoresist layer, using a patterned mask plate (made of chromium) to expose the photoresist, developing with a developer, growing the lower...

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Abstract

The invention relates to the technical field of preparation of acoustic resonators, in particular to a cavity type bulk acoustic resonator with a lower electrode protection layer and a preparation method of the cavity type bulk acoustic resonator. The invention aims to provide a preparation method of a cavity type bulk acoustic wave resonator with a lower electrode protection layer and the cavitytype bulk acoustic wave resonator. By means of the design that the lower electrode is provided with the lower electrode protection layer wrapping the lower electrode, the technical problems that an existing etching agent of a sacrificial layer can affect etching of a lower electrode material, then the electrode structure is damaged, and the device performance is affected are solved.

Description

technical field [0001] The invention relates to the technical field of acoustic wave resonator preparation, in particular to a cavity-type bulk acoustic wave resonator with a lower electrode protection layer and a preparation method thereof. Background technique [0002] With the rapid development of wireless communication technology, traditional dielectric filters and surface acoustic wave filters are difficult to meet the high frequency requirements, and the new generation of thin film bulk acoustic resonators can meet this requirement well. The basic structure of the film bulk acoustic resonator is a simple sandwich structure: upper electrode-piezoelectric film-lower electrode, and the integrity of the electrode has a certain influence on the performance of the device. [0003] At present, thin-film bulk acoustic resonators are divided into cavity type and solid-state assembly type. The cavity type is more used because of its simple structure. The formation of the cavit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02015H03H2003/023
Inventor 帅垚罗文博吴传贵
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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