Method for preparing Fe-Si thin film with unbalanced magnetron sputtering technology
A magnetron sputtering, non-equilibrium technology, used in sputtering coating, ion implantation coating, metal material coating process, etc. Sample surface uniformity and other issues to achieve the effect of promoting production and application, improving quality and deposition rate, and improving quality and resistivity
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Embodiment 1
[0050] A kind of method utilizing unbalanced magnetron sputtering technology to prepare Fe-Si thin film, its flow chart is shown in figure 1 , including the following steps:
[0051] 1) use figure 2 In the unbalanced magnetron sputtering deposition device, the pretreated lithium fluoride substrate is placed on the substrate seat of the unbalanced magnetron sputtering reactor, and the vacuum degree is adjusted to 5×10-4 Pa, and adjust the heating system in the reactor to raise the temperature of the substrate on the substrate holder to 300°C;
[0052] 2) Pass argon gas into the reactor (deposition chamber), control its flow rate to 15sccm, adjust the air pressure in the reactor to 4.5Pa, the rotation speed of the substrate base is 10r / min, and use Fe- Si alloy target (8.6wt%Si);
[0053] 3) Turn on the power supply of the magnetron target, adjust the power supply to 80W, and use figure 2 The bracket that can translate left and right as described in the article adjusts the ...
Embodiment 2
[0060] A kind of method utilizing unbalanced magnetron sputtering technology to prepare Fe-Si film, specifically comprises the steps:
[0061] 1) use figure 2 In the unbalanced magnetron sputtering deposition device, the pretreated lithium fluoride substrate is placed on the substrate seat of the unbalanced magnetron sputtering reactor, and the vacuum degree is adjusted to 5×10 -4 Pa, and adjust the heating system in the reactor to raise the temperature of the substrate on the substrate holder to 300°C;
[0062] 2) Pass argon gas into the reactor (deposition chamber), control its flow rate to 15sccm, adjust the air pressure in the reactor to 4.5Pa, the rotation speed of the substrate base is 10r / min, and use Fe- Si alloy target (8.6wt% Si);
[0063] 3) Turn on the power supply of the magnetron target, adjust the power supply to 80W, and use figure 2 Adjust the distance between the two facing magnetron targets to 50mm with the support that can be translated left and right,...
Embodiment 3
[0068] A kind of method utilizing unbalanced magnetron sputtering technology to prepare Fe-Si film, specifically comprises the steps:
[0069] 1) Place the pretreated lithium fluoride substrate on the substrate seat of the unbalanced magnetron sputtering reactor, and adjust the vacuum degree to 5×10 -4 Pa, and adjust the heating system in the reactor to raise the temperature of the substrate on the substrate holder to 300°C;
[0070] 2) Pass argon gas into the reactor (deposition chamber), control its flow rate to 15sccm, adjust the air pressure in the reactor to 4.5Pa, the rotation speed of the substrate base is 10r / min, and use Fe- Si alloy target (8.6wt% Si);
[0071] 3) Turn on the power supply of the magnetron target, adjust the power supply to 50W, and use figure 2 Adjust the distance between the two facing magnetron targets to 60mm with the support that can be translated left and right, and deposit and control the deposition time to 60min;
[0072] 4) Stop feeding i...
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Abstract
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