Method of forming a semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of low breakdown voltage of semiconductor devices, achieve the effects of increasing breakdown voltage, reducing antenna effect, and good etching quality
Active Publication Date: 2022-03-25
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0005] Then the "antenna effect" of the semiconductor device formed by the method of the prior art is relatively serious, and the breakdown voltage of the formed semiconductor device is low
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[0027] As mentioned above, the existing method for forming a semiconductor device has the problem of "antenna effect", and the breakdown voltage of the formed semiconductor device is low.
[0028] Please continue to refer to Figure 1-3 , the research found that the reason why the semiconductor devices formed by the prior art are prone to "antenna effect" is that the breakdown voltage is low. There are two main reasons: one is that after removing a part of the thickness of the copper plug 103, the surface roughness of the remaining copper plug is relatively high, which is prone to "antenna effect"; After the plug 103, when the partial thickness of the diffusion barrier layer 101 is removed, since the etching solution has different etching rates for different materials in the etching process, it is difficult to make the remaining diffusion barrier layer 101 after etching exactly the same as the remaining copper plug. 103 The surface is flush, and the height between the two is i...
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The invention discloses a method for forming a semiconductor device, comprising: providing a substrate, a conductive plug is formed in the substrate, the top of the conductive plug is flush with the surface of the substrate, the conductive plug and A diffusion barrier layer is also formed between the substrates; removing a part of the thickness of the conductive plug; etching a part of the thickness of the diffusion barrier layer, the process is carried out in a high-level / low-level bias voltage mode, After the etching, the remaining diffusion barrier layer is flush with the remaining surface of the conductive plug. In the method for forming a semiconductor device of the present invention, since the etching process is used when removing the diffusion barrier layer, and the etching process is carried out in a high-level / low-level bias voltage mode, it can be better controlled The thickness and etching quality of the etched diffusion barrier layer better ensure that the remaining diffusion barrier layer is flush with the remaining surface of the conductive plug after the etching process, effectively reducing the "antenna effect".
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the increasing demand for high integration and high performance of VLSI, semiconductor technology is developing towards technology nodes with smaller feature size, and the computing speed of the chip is obviously affected by the resistance-capacitance delay caused by metal conduction. Therefore, in the current semiconductor technology, copper with lower resistivity is used instead of aluminum to form the interconnect structure, so as to improve the phenomenon of resistance-capacitance delay. [0003] Although copper has the characteristics of low resistivity and excellent resistance to electromigration, compared with aluminum metal, copper metal has the disadvantage of easy diffusion. Under the high temperature heat treatment above 200 degrees Celsius, copper atoms rapidly...
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IPC IPC(8): H01L21/768H01L21/311
CPCH01L21/76865H01L21/31116
Inventor 张海洋蒋鑫王士京
Owner SEMICON MFG INT (SHANGHAI) CORP