Low-damage AlGaN/GaN HEMT gate groove etching method

Abstract

The invention discloses a low-damage AlGaN GaN HEMT gate groove etching method, and belongs to the technical field of semiconductor manufacturing. In the etching process of the method, the movement direction of ions in plasma is controlled to be horizontal to the direction of a substrate, and the concentration of the plasma is controlled to be 108-1010 cm<3>, the etching uniformity is improved, the roughness of an etching surface is reduced, the bombardment of the plasma on the surface of a sample is reduced to the minimum, the purpose of reducing surface damage is achieved, meanwhile, the etching rate can be reduced to 2-3 nm / min, and the etching precision is controlled accurately in the etching process.

Description

technical field [0001] The invention relates to a low-damage AlGaN / GaNHEMT gate groove etching method, which belongs to the technical field of semiconductor manufacturing. Background technique [0002] GaN HEMT devices have good application prospects in GaN-based integrated circuits in harsh environments due to their wide bandgap characteristics, good high-temperature characteristics and radiation resistance characteristics. However, due to the large difference in the mobility of holes and electrons in GaN, it is still difficult to prepare complementary symmetrical GaN field effect transistor circuit units in a CMOS-like manner, regardless of the device planar structure or device operating speed. A feasible method is to develop the turn-on and turn-off of n-type GaN enhancement devices that require a positive gate voltage to open the channel, which can realize GaN high-power switching devices and circuits, as well as enhancement / depletion mode digital integrated circuits. U...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems that the existing etching technology has a large damage to the surface of the etching sample, which is easy to be broken down, the etching surface of the sample is uneven, and the etching precision cannot be accurately controlled, the present invention proposes a low-damage AlGaN / GaN HEMT gate groove The etching method, the low-damage AlGaN / GaNHEMT gate groove etching method provided by the present invention, is based on the mild plasma technology;

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