Polysilicon film preparation method and film transistor
A technology of polysilicon thin film and amorphous silicon layer, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of small polysilicon grains, uneven grain size, and easy leakage of TFT devices, etc., and achieve high yield The effect of lifting, good size consistency and small difference
Inactive Publication Date: 2019-08-02
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0005] This disclosure provides a method for preparing a polysilicon thin film and a thin film transistor to solve the problem that in the existing preparation technology, the prepared polysilicon grains are small and the grains are not uniform in size. Conducive to product performance and other issues
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[0030] The technical solutions in the embodiments of the disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the disclosure. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present disclosure.
[0031] In the embodiment of the present disclosure, as figure 1 as shown, figure 1 It is a schematic flow chart of the preparation process of the polysilicon thin film according to the embodiment of the present disclosure.
[0032] Described technological process comprises:
[0033] Step S100 : first depositing a buffer layer and an amorphous silicon layer on a substrate, and heating the substrate, so that crystal grains of the amorphous silicon layer undergo solid phase crystallizati...
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Abstract
The invention provides a polysilicon film preparation method and a film transistor. The method comprises steps that a buffer layer and an amorphous silicon layer are deposited on the substrate and heated, and crystal grains are subjected to solid-phase crystallization; after solid-phase crystallization is completed, the substrate is treated, and a layer of insulation film is prepared; and lastly,quasimolecule laser annealing is performed, and the amorphous silicon layer on the substrate is recrystallized. The method is advantaged in that through performing two different heat treatments on thecrystal grains, a superior polysilicon film is obtained, and a film transistor is prepared by utilizing the polysilicon film to improve the product yield.
Description
technical field [0001] The disclosure relates to the technical field of polysilicon thin films, in particular to a preparation method of polysilicon thin films and a thin film transistor. Background technique [0002] With the continuous upgrading and development of display technology, various types of displays appear on the market. In order to obtain a display with superior performance, higher requirements are put forward for the internal components of the display. [0003] In the current display, the backplane technology is relatively mature. In the production of the backplane technology, polysilicon layer is mostly used. In the existing technology, the production technology of this polysilicon mainly includes solid phase crystallization (Solid Phase Crystallization, SPC) technology And excimer laser annealing (Excimer Laser Annealer, ELA) technology. Among them, in the traditional SPC technology, although the grain size consistency after crystallization is good, due to t...
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Patent Timeline
Login to View More IPC IPC(8): H01L21/02H01L29/786
CPCH01L21/02532H01L21/02592H01L21/02667H01L21/02675H01L29/78672
Inventor 张卜芳李松杉
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD