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Shielded gate MOSFET device with shielding layer and preparation method thereof

A technology of shielding gate and shielding layer, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing device transfer capacitance, shorten the design cycle and cost, reduce switching loss, and reduce the cost of small chips. Effect

Active Publication Date: 2019-08-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above analysis, the embodiment of the present invention aims to provide a shielded gate MOSFET device and its preparation method to solve the problem that it is difficult to greatly reduce the transfer capacitance of the device without sacrificing the electrical performance of the device in the prior art

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  • Shielded gate MOSFET device with shielding layer and preparation method thereof
  • Shielded gate MOSFET device with shielding layer and preparation method thereof
  • Shielded gate MOSFET device with shielding layer and preparation method thereof

Examples

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Embodiment 1

[0064] A specific embodiment of the present invention discloses a shielded gate MOSFET device with a shielding layer, such as figure 1 As shown, its conduction region includes a plurality of periodically arranged primitive cells, and the gate structure of each of the primitive cells includes a trench, a main shield electrode 103, two sub shield electrodes 104a, 104b and a trench gate electrode 106. The number of primitive cells is determined by specific design requirements, which is not limited in this embodiment.

[0065] The trench is disposed in the epitaxial layer 101 of the first conductivity type on the semiconductor substrate.

[0066] The main shield electrode 103, the two sub-shield electrodes 104a, 104b and the trench gate electrode 106 are all disposed in the trenches. The trench gate electrode 106 is arranged on the top of the trench, the main and secondary shield electrodes are arranged below the trench gate electrode 106 , and the two sub-shield electrodes 104 ...

Embodiment 2

[0072] Optimized on the basis of the shielded gate MOSFET device with shielding layer described in Example 1, such as image 3 As shown, the main shielding electrode 103 is arranged vertically, and the secondary shielding electrodes 104a, 104b and the trench gate electrode 106 are arranged horizontally.

[0073] In order to improve the manufacturing efficiency of the process, the main shielding electrode 103 and the trench gate electrode 106 may be arranged axially symmetrically along the central axis of the trench, so that the process is easy to implement and the manufacturing cost is reduced.

[0074] Preferably, the thickness of each of the secondary shielding electrodes 104a, 104b is 3%-5% of the thickness of the main shielding electrode 103, and the width thereof is 95%-99% of the width of the main shielding electrode 103, which is the same as the thickness of the main shielding electrode 103. The interval between the main shield electrodes 103 is 3% to 5% of the width of...

Embodiment 3

[0086] Another specific embodiment of the present invention discloses a method for preparing the shielded gate MOSFET device with a shielding layer described in Embodiment 1, such as Figure 5 As shown, the method includes the following steps:

[0087] S1. depositing an epitaxial layer 101 of a first conductivity type on a semiconductor substrate, and preparing a trench on the epitaxial layer;

[0088] S2. The main shield electrode 103, the two sub-shield electrodes 104a, 104b, and the trench gate electrode 106 are sequentially prepared inside the trench to form a channel region 107 and a drift region; wherein, the trench gate electrode 106 is arranged in At the top of the trench, the main and sub-shielding electrodes 104a, 104b are arranged below the trench gate electrode 106, and the two sub-shielding electrodes 104a, 104b are symmetrically arranged on both sides of the top of the main shielding electrode 103; the channel region 107 It is arranged on both sides of the trenc...

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Abstract

The invention relates to a shielded gate MOSFET device with a shielding layer, which belongs to the technical field of power semiconductor devices and solves a problem that it is difficult to significantly reduce the transfer capacitance of the device without sacrificing the electrical performance of the device in the prior art. The conduction region of the shielded gate MOSFET device includes a plurality of periodically arranged primitive cells, and the gate structure of each primitive cell includes a trench, a main shielding electrode, two subsidiary shielding electrodes and a trench gate electrode, wherein the trench is arranged in a first conduction type epitaxial layer on a semiconductor substrate; the main shielding electrode, the two subsidiary shielding electrodes and the trench gate electrode are all arranged in the trench; the trench gate electrode is arranged on the top of the trench, the main and subsidiary shielding electrodes are arranged below the trench gate electrode,and the two subsidiary shielding electrodes are symmetrically arranged at two sides of the top of the main shielding electrode; and the main shielding electrode, the two subsidiary shielding electrodes and the trench gate electrode all adopt a second conduction type material and are mutually isolated through a dielectric layer.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a shielded gate MOSFET device with a shielding layer and a preparation method thereof. Background technique [0002] With the rapid development of electronic power systems, MOSFET devices have become one of the important irreplaceable devices in the field of microelectronics due to their advantages such as voltage-controlled turn-on, high input impedance, good thermal stability, and fast switching rates, and are widely used in various in electronic design. [0003] Since the 1970s, people began to study the application of MOSFET devices in power equipment. In recent decades, with the rapid development of semiconductor manufacturing technology, the manufacturing technology of MOSFET devices has become more and more mature, and the manufacturing cost has been continuously reduced, making MOSFET devices occupy an absolutely mainstream position with a rated volta...

Claims

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Application Information

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IPC IPC(8): H01L29/40H01L29/78H01L27/088H01L21/336H01L21/8234
CPCH01L21/823437H01L21/823462H01L27/088H01L29/404H01L29/405H01L29/407H01L29/66666H01L29/7827
Inventor 陈润泽王立新
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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