Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. In the manufacturing method, after forming a first conductive structure, an interlayer dielectric layer is used to form a dielectric trench, and sacrificial spacers are sequentially formed on the sidewalls of the dielectric trench. and isolating the spacers and forming a second conductive structure in the remaining space of the dielectric trench, forming an air gap where the sacrificial spacers are removed, and sealing the top of the air gap with a cover layer, utilizing this air gap The advantage of the low dielectric constant of the gap reduces the parasitic capacitance between the first conductive structure and the second conductive structure, thereby effectively improving the device performance. It is suitable for the manufacture of semiconductor devices such as FINFET devices with technology nodes of 7nm and below. The semiconductor device of the present invention utilizes the air gap existing between the second conductive structure and the first conductive structure to reduce the parasitic capacitance between the first conductive structure and the second conductive structure, thereby improving the device performance.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Generally, a semiconductor device includes a first conductive structure and a second conductive structure, wherein each second conductive structure is usually formed between two first conductive structures, and a dielectric is interposed between the first conductive structure and the second conductive structure. layer, the first conductive structure may include a gate, a bit line, a metal line, etc., and the second conductive structure may include a contact plug, a storage node contact plug, a bit line contact plug, and a conductive via structure electrically connecting two metal lines Wait. As semiconductor devices are highly integrated, the distance between the first conductive structure and the second conductive structure gradually decreases, resulting in an incre...

AI Technical Summary

Problems solved by technology

As semiconductor devices are highly integrated, the distance between the first conductive structure and the second conductive structure gradually decreases, resulting in an increase in the parasitic capacitance between the first conductive structure and the second conductive structure, which in turn affects the performance of the semiconductor device

Images