Perovskite light-emitting diode based on pre-spin coating FABr and preparation method thereof

A light-emitting diode, perovskite technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as reducing industrial production costs, expensive and disadvantageous crown ether materials, and achieving less material usage , The preparation cycle is short, and the brightness is obvious.

Active Publication Date: 2019-08-13
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The literature Nature Communication.2018, 9, 3892. reported that the doping of crown ether into the precursor can improve the performance of perovskite light-emitting diodes, but the crown ether material is expensive, which is not conducive to reducing the cost of industrial production

Method used

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  • Perovskite light-emitting diode based on pre-spin coating FABr and preparation method thereof
  • Perovskite light-emitting diode based on pre-spin coating FABr and preparation method thereof
  • Perovskite light-emitting diode based on pre-spin coating FABr and preparation method thereof

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Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0049] Perovskite light-emitting diode based on pre-spin-coated FABr, including indium tin oxide glass substrate, hole transport layer, FABr layer, perovskite light-emitting layer, electron transport layer, electron injection layer and metal cathode layered sequentially from bottom to top ;

[0050] The hole transport layer is prepared from polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS), and the film thickness is 45nm;

[0051] The FABr layer is prepared by spinning a FABr solution with a solution concentration of 0.08mol / L after 10mg FABr is dissolved in 1mL DMSO;

[0052] The perovskite luminescent layer is prepared by adding an anti-solvent dropwise during the spin coating process of the perovskite precursor solution, and the perovskite precursor solution is composed of 0.1468g PbBr 2 , 0.0336g MABr and 0.0404g PEABr were dissolved in 1mL DMSO; Pb in the obtained perovskite precursor 2+ The concentration is 0.5mol / L;

[0053] The electron transport layer...

specific Embodiment 2

[0063] Perovskite light-emitting diode based on pre-spin-coated FABr, including indium tin oxide glass substrate, hole transport layer, FABr layer, perovskite light-emitting layer, electron transport layer, electron injection layer and metal cathode layered sequentially from bottom to top ;

[0064] The hole transport layer is prepared from polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS), and the film thickness is 45nm;

[0065] The FABr layer is prepared by spinning a FABr solution with a solution concentration of 0.16mol / L after 20mg FABr is dissolved in 1mL DMSO;

[0066] The perovskite luminescent layer is prepared by adding an anti-solvent dropwise during the spin coating process of the perovskite precursor solution, and the perovskite precursor solution is composed of 0.1468g PbBr 2 , 0.0336g MABr and 0.0404g PEABr were dissolved in 1mL DMSO; Pb in the obtained perovskite precursor 2+ The concentration is 0.5mol / L;

[0067] The electron transport layer...

specific Embodiment 3

[0077] Perovskite light-emitting diode based on pre-spin-coated FABr, including indium tin oxide glass substrate, hole transport layer, FABr layer, perovskite light-emitting layer, electron transport layer, electron injection layer and metal cathode layered sequentially from bottom to top ;

[0078] The hole transport layer is prepared from polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS), and the film thickness is 45nm;

[0079] The FABr layer is prepared by spin coating with a solution concentration of 0.48mol / L after 60mg FABr is dissolved in 1mL DMSO;

[0080] The perovskite luminescent layer is prepared by adding an anti-solvent dropwise during the spin coating process of the perovskite precursor solution, and the perovskite precursor solution is composed of 0.1468g PbBr 2 , 0.0336g MABr and 0.0404g PEABr were dissolved in 1mL DMSO; Pb in the obtained perovskite precursor 2+ The concentration is 0.5mol / L;

[0081] The electron transport layer is prepared...

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Abstract

The invention discloses a perovskite light-emitting diode based on pre-spin coating FABr. The perovskite light-emitting diode comprises an indium tin oxide glass substrate, a hole transport layer, anFABr layer, a perovskite light-emitting layer, an electron transport layer, an electron injection layer and a metal cathode which are sequentially stacked from bottom to top. The perovskite light-emitting diode has the advantages that the FABr layer is pre-spin-coated between the hole transport layer and the perovskite light-emitting layer, so that the performance of the perovskite light-emittingdiode is effectively improved.

Description

technical field [0001] The invention relates to the field of perovskite light-emitting diodes, in particular to a perovskite light-emitting diode based on pre-spin coating FABr and a preparation method thereof. Background technique [0002] Organic-inorganic hybrid perovskite materials have the advantages of high carrier mobility, adjustable luminescence peak position, high color purity, solution processability and low price, and are excellent materials for preparing light-emitting diodes. However, the performance of light-emitting diodes based on organic-inorganic hybrid perovskite materials is still not comparable to that of traditional inorganic or organic light-emitting diodes. Therefore, improving the light-emitting performance of organic-inorganic hybrid perovskite light-emitting diodes is an urgent problem to be solved. The literature Nature Nanotechnology.2016,11,872-877. reported that in three-dimensional perovskite materials such as PEA + Ligand materials with la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/56
CPCH10K71/12H10K85/60H10K71/00
Inventor 邓玲玲夏鹏飞李永哲卢瑶陈淑芬
Owner NANJING UNIV OF POSTS & TELECOMM
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