A method for crushing silicon crystals and a heat treatment device
A technology of a heat treatment device and a crushing method, which is applied in the directions of post-processing, grain processing, crystal growth, etc., can solve the problems of easy contamination in the process, easy cracking, and silicon crystals are not easily broken.
Active Publication Date: 2021-04-23
XIAN ESWIN SILICON WAFER TECH CO LTD
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Problems solved by technology
[0004] In view of this, the present invention provides a method for crushing silicon crystals and a heat treatment device to solve the problems that silicon crystals are not easily broken, cracks are easily generated after crushing, and subsequent processes are easily polluted.
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[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention belong to the protection scope of the present invention.
[0026] The method for crushing a silicon crystal according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
[0027] The method for crushing a silicon crystal according to an embodiment of the present invention includes: performing heat treatment on the silicon crystal, the silicon crystal at least includes an adjacent ...
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The invention provides a silicon crystal crushing method and a heat treatment device. The silicon crystal crushing method includes: performing heat treatment on the silicon crystal, the silicon crystal at least including a first area and a second area adjacent to each other, the first area and the second area The temperature difference in the second region is greater than the temperature difference threshold, and the heat-treated silicon crystal is crushed. According to the silicon crystal crushing method of the present invention, after the silicon crystal is heat-treated, the temperature difference between the first region and the second region on the silicon crystal is greater than the temperature difference threshold to generate thermal strain, so that the silicon crystal is easily broken, and the silicon crystal is easily broken. When the temperature is different, it is convenient to crush the silicon crystal after heat treatment. The temperature required for heat treatment is low, and cracks are not easy to occur on the crushed silicon crystal, so as to prevent impurities and reagent liquid from entering the crack layer in the subsequent etching process, and avoid impurities and reagent liquid. Contaminate the cracked layer and improve the purity of the broken silicon crystal.
Description
technical field [0001] The invention relates to the field of crystalline silicon manufacturing, in particular to a method for crushing silicon crystals and a heat treatment device. Background technique [0002] There are single crystal and polycrystalline silicon crystals. The single crystal ingot manufactured in the CZ (Czochralski) process can be divided into top, bottom and straight body parts according to its parts. The straight body part is used to produce wafers, and the top part cannot be used due to poor shape. , The bottom end part is a part where impurities gather at a high concentration due to impurity concentration segregation, so this part cannot be used either, and these top and bottom parts are reused as raw materials for melting and pulling CZ single crystal again. In addition, when the CZ pulling process is stopped due to operational reasons, a mixed crystal of both single crystal and polycrystalline will be obtained. For these crystals, the crushing operati...
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IPC IPC(8): B02C23/00C30B29/06C30B33/02
CPCB02C23/00C30B29/06C30B33/02
Inventor 宫尾秀一
Owner XIAN ESWIN SILICON WAFER TECH CO LTD