Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graded cross-linked compression sensing supercapacitor and preparation method thereof

A supercapacitor and compressive sensing technology, which is applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, instruments, etc., can solve the problems that the array of aligned carbon nanotubes cannot bear stress and strain reversibly, and has no compressibility, etc. , to achieve excellent energy storage and strain sensing performance, good capacitance change response, and good application prospects

Inactive Publication Date: 2019-08-16
FUDAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, aligned carbon nanotube arrays generally cannot withstand stress and strain reversibly, i.e., they have no compressibility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graded cross-linked compression sensing supercapacitor and preparation method thereof
  • Graded cross-linked compression sensing supercapacitor and preparation method thereof
  • Graded cross-linked compression sensing supercapacitor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Preparation of compressible carbon nanotube array electrode with gradient crosslinking structure

[0027] The gradient cross-linked compressible carbon nanotube array electrode is prepared by chemical vapor deposition, and the method is as follows: firstly, a catalyst is deposited on a silicon wafer by an electron beam evaporation coating apparatus. where Al 2 o 3 The thickness of Fe is 5 nm, the thickness of Fe is 1.2 nm, and the deposition rates of the two are 2 Å / s and 0.5 Å / s, respectively. Using argon and hydrogen as the carrier gas and ethylene as the carbon source, put the catalyst-coated silicon wafer into the tube furnace. After setting the deposition program, cover the lid and start the heating program to grow the carbon nanotube array. The argon gas flow rate is 400 sccm, the hydrogen gas flow rate is 30 sccm, and the ethylene gas flow rate is 90 sccm. The reaction temperature is 750° C., the heating rate is 40° C. / min, and the growth time is 80 minute...

Embodiment 2

[0033] (1) Preparation of compressible carbon nanotube array electrode with gradient crosslinking structure

[0034] The gradient cross-linked compressible carbon nanotube array electrode is prepared by chemical vapor deposition, and the method is as follows: firstly, a catalyst is deposited on a silicon wafer by an electron beam evaporation coating apparatus. where Al 2 o 3 The thickness of Fe is 6 nm, the thickness of Fe is 1.1 nm, and the deposition rates of the two are 2.5 Å / s and 0.6 Å / s, respectively. Using argon and hydrogen as the carrier gas and ethylene as the carbon source, put the catalyst-coated silicon wafer into the tube furnace. After setting the deposition program, cover the lid and start the heating program to grow the carbon nanotube array. The argon gas flow rate is 400 sccm, the hydrogen gas flow rate is 30 sccm, and the ethylene gas flow rate is 90 sccm. The reaction temperature is 750° C., the heating rate is 50° C. / min, and the growth time is 90 minu...

Embodiment 3

[0040] (1) Preparation of compressible carbon nanotube array electrode with gradient crosslinking structure

[0041] The gradient cross-linked compressible carbon nanotube array electrode is prepared by chemical vapor deposition, and the method is as follows: firstly, a catalyst is deposited on a silicon wafer by an electron beam evaporation coating apparatus. where Al 2 o 3 The thickness of Fe is 5 nm, the thickness of Fe is 1.1 nm, and the deposition rates of the two are 2Å / s and 0.4Å / s, respectively. Using argon and hydrogen as the carrier gas and ethylene as the carbon source, put the catalyst-coated silicon wafer into the tube furnace. After setting the deposition program, cover the lid and start the heating program to grow the carbon nanotube array. The argon gas flow rate is 400 sccm, the hydrogen gas flow rate is 30 sccm, and the ethylene gas flow rate is 90 sccm. The reaction temperature is 750° C., the heating rate is 45° C. / min, and the growth time is 100 minutes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Heightaaaaaaaaaa
Surface areaaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of flexible energy storage and sensor parts and in particular to a graded cross-linked compression sensing supercapacitor and a preparation method thereof.The compression sensing supercapacitor is a sandwich structure. The two electrodes are both compressible carbon nanotube arrays with graded cross-linked structures. A gel electrolyte layer is arranged between the two electrodes. A compressible carbon nanotube array material is prepared through the chemical vapor deposition. Each carbon nanotube array is capable of withstanding different compressive strains and has a reversible compression property up to 100000 times. The compression sensing supercapacitor can store energy, can withstand and sense different strain changes, has a high area specific capacity, can maintain electrochemical performance well during 3000 times of compression cycles at a 60% compression strain, and has excellent and stable compression strain sensing performance. The supercapacitor has broad application prospects in the fields of electronic skin and bioelectronic devices in the future.

Description

technical field [0001] The invention belongs to the technical field of flexible energy storage and sensing devices, and in particular relates to a compression sensing supercapacitor and a preparation method. Background technique [0002] Portable and wearable electronic devices will become an important part of our future life. In the process of practical application, these flexible electronic devices will be subjected to different degrees of stress. However, under high compressive strain, conventional electronic devices may crack and fail to work properly, which even leads to serious safety issues such as the leakage of toxic components. In order to solve the above challenges, it is urgent to develop flexible electronic devices that can withstand different degrees of compressive stress and strain and maintain normal operation. In addition, for the current portable and wearable electronic devices, their energy storage and sensing functions are usually realized by preparing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01G11/24H01G11/36H01G11/84H01G11/86G01N3/32
CPCG01N3/32G01N2203/0075H01G11/24H01G11/36H01G11/84H01G11/86Y02E60/13
Inventor 彭慧胜赵阳
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products