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DDD UHV MOS device structure and manufacturing method thereof

A technology of device structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve the problems of high contact resistance and high device power consumption.

Inactive Publication Date: 2019-08-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in traditional DDD UHV MOS devices based on WSI process technology, the contact resistance between metal and semiconductor materials is usually large, resulting in high power consumption of the device.

Method used

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  • DDD UHV MOS device structure and manufacturing method thereof
  • DDD UHV MOS device structure and manufacturing method thereof
  • DDD UHV MOS device structure and manufacturing method thereof

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Embodiment Construction

[0034] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.

[0035] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0036] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged...

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Abstract

The invention provides a DDD UHV MOS device structure and a manufacturing method thereof. A grid electrode can be formed on a substrate, shallow doping regions are formed in the substrate on two sidesof the grid electrode, source and drain regions can be formed in the shallow doping regions, and metal silicide layers can be formed in the source and drain regions, so that when the source and drainregions are connected with a contact plug in a peripheral circuit, the metal silicide layers can be in good contact with the source and drain regions while the high breakdown voltage of UHV is ensured, and the contact resistance between the contact plug and the source and drain is reduced, thereby reducing the overall power consumption of the device and improving the performance of the device.

Description

technical field [0001] The present application relates to the field of semiconductor devices and their manufacture, in particular to a DDD UHV MOS device structure and its manufacturing method. Background technique [0002] With the continuous development of semiconductor technology, MOS devices tend to be high-speed and high-performance. DDD UHV MOS (Double Diffused Drain Ultra High Voltage MOSFET) device is a device with a higher working voltage. , its operating voltage can be around 10-40V, widely used in circuit output interface, LCD drive circuit, etc. DDD UHV MOS devices are easily compatible with traditional CMOS processes. Compared with LDMOS (Lateral Diffused MOS) devices, the process is simpler and the manufacturing cost is lower. [0003] The DDD UHV MOS device can be connected with other devices to form a high-performance chip. Specifically, an electrical connection can be formed by contacting metal and semiconductor materials. However, in traditional DDD UHV M...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78H01L29/45
CPCH01L29/45H01L29/66674H01L29/7801
Inventor 田武许文山孙超
Owner YANGTZE MEMORY TECH CO LTD
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