Unlock instant, AI-driven research and patent intelligence for your innovation.

IGBT device with SCR structure

A device, N-type technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of device on-state characteristics and large switching loss, and achieve the effect of reducing leakage current, reducing turn-off time, and reducing turn-off loss.

Active Publication Date: 2019-08-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the foregoing, the present invention provides an IGBT device with an SCR (Silicon Controlled Rectifier, silicon controlled rectifier) ​​structure for the problems such as device on-state characteristics and large switching losses that exist in the existing SFP Trench-IGBT device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT device with SCR structure
  • IGBT device with SCR structure
  • IGBT device with SCR structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0026] An IGBT device with an SCR structure, the entire cell is symmetrical about the cell center line; its cell structure includes a metal electrode 7, a P+ collector region 6, an N-type buffer layer 5, and an N-drift region stacked in sequence from bottom to top 4. The metal emitter 9, the metal electrode 17 and the metal connection 18 are located above the N-drift region 4; the middle region of the top layer of the N-drift region 4 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of power semiconductors, in particular to an IGBT device with an SCR structure. A first N-type region, a P-type region, a second N-type region and a P+ floating Pbody region form an SCR structure in a discrete floating Pbody region. When the device is in forward conduction, the SCR structure is not connected, the hole enhanced conductivity modulation isstored, and a metal electrode is connected with a diode in a series manner so as to further reduce a leakage current; a hole discharge channel is provided during switching-off, so that the switching-off time is shortened, and the switching time and the switching loss are reduced under the condition that other electrical characteristics are not influenced; and when the device is in a blocking state, the SCR structure is switched on, and the voltage withstanding capability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to an IGBT device with an SCR structure. Background technique [0002] An insulated gate bipolar transistor (Insulated Gate Bipolar Transister, IGBT) has a structure composed of a MOS structure and a triode structure. IGBT is widely used in switching power supply, rectifier, inverter, UPS (Uninterruptible Power System, uninterruptible power supply) and other fields due to its advantages of small driving current, high input impedance, good thermal stability, and large working current. It is also the basis for the development of new technologies such as new energy vehicles and smart grids. [0003] Since Baliga of General Electric Company of the United States first proposed the concept of IGBT in 1979, it has developed rapidly. From the early PT (Punch Through) structure to the NPT (Non-punch Through) structure, and then to the addition of the N+ buffer laye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739
CPCH01L29/7397
Inventor 李泽宏孙肇峰杨洋赵一尚莫佳宁何云娇彭鑫任敏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA