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Active component substrate

A technology of active components and substrates, applied in electrical components, semiconductor devices, electric solid-state devices, etc., can solve the problems of high cost, multi-process time, complicated process steps, etc.

Active Publication Date: 2021-07-20
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the process of low-temperature polysilicon thin film transistor liquid crystal display, 10 to 11 photomask processes are usually used when making the pixel structure, compared with the process of amorphous silicon thin film transistor liquid crystal display, which is 7 to 8 processes, and the low temperature Polysilicon thin film transistor liquid crystal display must spend more process time and higher cost, and the process steps are also very complicated

Method used

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  • Active component substrate
  • Active component substrate
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Embodiment Construction

[0075] Below in conjunction with accompanying drawing, structural principle and working principle of the present invention are specifically described:

[0076] figure 1It is a schematic top view of an active device substrate according to an embodiment of the present invention. Figure 2A to Figure 2I It is a schematic top view of the manufacturing process of the active component substrate according to an embodiment of the present invention, wherein Figure 2A to Figure 2I correspond figure 1 The region R1. Figure 3A to Figure 3I It is a schematic cross-sectional view of the manufacturing process of the active element substrate according to an embodiment of the present invention, wherein Figure 3A to Figure 3I correspond Figure 2A to Figure 2I The section lines A-A' and B-B'.

[0077] Please refer to figure 1 , Figure 2I as well as Figure 3I The active device substrate 100 includes a substrate 110, has an active region 100a and a peripheral region 100b outside the ...

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Abstract

An active component substrate includes a base, an active component, a touch signal line, a first insulating layer, a touch electrode, a second insulating layer, a pixel electrode and a first bridge component. The touch signal lines are disposed on the base. The first insulating layer is disposed on the touch signal line and has a first contact window overlapping with a contact portion of the touch signal line. The touch electrode is disposed on the first insulating layer and has a contact portion. The second insulating layer is disposed on the touch electrode and has a second contact window. The second contact window overlaps the contact portion of the touch electrode and the first contact window of the first insulating layer. The first bridging element is disposed on the second insulating layer and separated from the pixel electrode. The first bridging element is electrically connected to the contact portion of the touch electrode and the contact portion of the touch signal line through the first contact window and the second contact window.

Description

technical field [0001] The invention relates to a substrate, and in particular to an active component substrate. Background technique [0002] Generally speaking, liquid crystal displays can be divided into two types: amorphous silicon thin film transistor (amorphous silicon thin film transistor) liquid crystal display and low temperature polysilicon thin film transistor (low temperature poly-silicon thin film transistor) liquid crystal display. Different from traditional amorphous silicon thin film transistors, low-temperature polysilicon thin film transistors have better electron mobility, and can produce smaller thin film transistors, so they can increase aperture ratio, improve display brightness and reduce power consumption. [0003] However, in the process of low-temperature polysilicon thin film transistor liquid crystal display, 10 to 11 photomask processes are usually used when making the pixel structure, compared with the process of amorphous silicon thin film tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77G06F3/041
CPCG06F3/0412H01L27/124H01L27/1248H01L27/1288
Inventor 黄淑惠林敬舜谢秀春陈亦伟
Owner AU OPTRONICS CORP
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