Check patentability & draft patents in minutes with Patsnap Eureka AI!

N-type AlxGa1-xAs material system semiconductor surface ohmic contact electrode and manufacturing method thereof

An ohmic contact electrode and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of high electrode manufacturing cost and complicated manufacturing process, so as to reduce manufacturing cost, reduce process difficulty, and enhance stability. sexual effect

Inactive Publication Date: 2019-08-23
CHANGCHUN UNIV OF SCI & TECH
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of complex preparation process of ohmic contact electrodes on the semiconductor surface of AlGaAs material system and high cost of making electrodes, the present invention provides a new N-type Al x Ga 1-x As material system semiconductor surface ohmic contact electrode and its manufacturing method, realizing semiconductor N-type Al at a simple and low cost x Ga 1-x Good electrical contact of As material system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type AlxGa1-xAs material system semiconductor surface ohmic contact electrode and manufacturing method thereof
  • N-type AlxGa1-xAs material system semiconductor surface ohmic contact electrode and manufacturing method thereof
  • N-type AlxGa1-xAs material system semiconductor surface ohmic contact electrode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] In this example, N-type Al 0.1 Ga 0.9 As is epitaxially obtained by MOVPE technology, for N-type Al 0.1 Ga 0.9 As was plated by In electrode and NiAuGe electrode respectively, and the I-V test was as follows: image 3 shown. When In electrodes are used, the four volumes are about 1mm 3 In particles stick to Al 0.1 Ga 0.9 The four corners of As are then alloyed in a nitrogen atmosphere, the nitrogen flow rate is 3SLPM, the alloying time is 250°C, and the alloying temperature is 420s. When NiAuGe electrodes are used, the Al 0.1 Ga 0.9 As placed on the magnetron sputtering tray, use aluminum foil to cover the Al 0.1 Ga 0.9 As, and use high-temperature tape to fix the aluminum foil, leaving the sputtering electrodes at the four corners, such as figure 2 As shown, magnetron sputtering sequentially prepares the first Ni layer, AuGe layer, second Ni layer and Au layer in a nitrogen atmosphere, the nitrogen pressure is 5E-4Pa, the thickness of the first Ni layer is ...

Embodiment 2

[0032]In this example, N-type Al 0.45 Ga 0.55 As is epitaxially obtained by MOVPE technology, using In electrode and NiAuGe electrode respectively, for N-type Al 0.45 Ga 0.55 As for plating electrodes. When In electrodes are used, the four volumes are about 1mm 3 In particles stick to Al 0.45 Ga 0.55 The four corners of As are then alloyed in a nitrogen atmosphere, the nitrogen flow rate is 3SLPM, the alloying time is 250°C, and the alloying temperature is 420s. When NiAuGe electrodes are used, the Al 0.45 Ga 0.55 As placed on the magnetron sputtering tray, use aluminum foil to cover the Al 0.45 Ga 0.55 As, and use high-temperature tape to fix the aluminum foil, leaving the sputtering electrodes at the four corners, such as figure 2 As shown, the first Ni layer, the AuGe layer, the second Ni layer and the Au layer were prepared sequentially in a nitrogen atmosphere by magnetron sputtering, the nitrogen flow rate was 3SLPM, the thickness of the first Ni layer was 5nm...

Embodiment 3

[0035] In this example, N-type Al 0.9 Ga 0.1 As is epitaxially obtained by MOVPE technology, using two methods of In electrode and NiAuGe electrode respectively, and for N-type Al 0.9 Ga 0.1 As for plating electrodes. When In electrodes are used, the four volumes are about 1mm 3 In particles stick to Al 0.9 Ga 0.1 The four corners of As are then alloyed in a nitrogen atmosphere, the nitrogen flow rate is 3SLPM, the alloying time is 250°C, and the alloying temperature is 420s. When NiAuGe electrodes are used, the Al 0.9 Ga 0.1 As placed on the magnetron sputtering tray, use aluminum foil to cover the Al 0.9 Ga 0.1 As, and use high-temperature tape to fix the aluminum foil, leaving the sputtering electrodes at the four corners, such as figure 2 As shown, the first Ni layer, the AuGe layer, the second Ni layer and the Au layer were prepared sequentially in a nitrogen atmosphere by magnetron sputtering, the nitrogen flow rate was 3SLPM, the thickness of the first Ni lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an N-type AlxGa1-xAs material system semiconductor surface ohmic contact electrode of different Al components and a manufacturing method thereof. When the Al component is greatthan or equal to 0 and less than or equal to 0.1, the metal In can be used as the electrode material to be adhered on the AlGaAs surface by rapid thermal annealing so that the ohmic contact between the AlGaAs material and the metal electrode can be realized. When the Al component is greater than or equal to 0 or less than or equal to 1, Ni / AuGe / Ni / Au alloy can be sputtered by magnetron sputteringso that the ohmic contact between the AlGaAs and the electrode can be realized. As for the N-type AlxGa1-xAs material, different electrode plating methods are selected to realize ohmic contact according to different Al components so as to reduce process difficulty and reduce manufacturing cost, the metal-semiconductor contact does not affect the current-voltage characteristics of the device because of implementation of the ohmic contact and thus the device stability is enhanced.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, in particular to an N-type Al x Ga 1-x As material system semiconductor surface ohmic contact electrode and its manufacturing method. Background technique [0002] Al x Ga 1-x As a group III-V semiconductor, As is considered to be one of the important basic materials for optoelectronics and electronics because of its excellent optical and electrical properties. Optoelectronic devices, microwave devices, and solar cells based on it are widely used in military, information technology and other fields. in Al x Ga 1-x In the application of As materials and the process of device fabrication, it is necessary to realize the interconnection with metal contacts, so as to realize the purpose of inputting or outputting current. According to the theory of semiconductor physics, after metal and semiconductor form contact (gold half-contact), due to the difference in work function, carriers will m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224H01L21/283H01L21/285H01L31/18
CPCH01L21/283H01L21/28575H01L31/022425H01L31/1844Y02P70/50
Inventor 王海珠何志芳范杰邹永刚马晓辉李辉徐莉
Owner CHANGCHUN UNIV OF SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com