A kind of PVD sputtering equipment, LED device and manufacturing method thereof

Abstract

The invention provides PVD sputtering equipment, an LED device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a patterned substrate; forming an Al(x)Cu(1-x)N buffer layer on the surface of the substrate; and forming a GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, a P-type GaN layer, an Ohmic contactlayer, an N electrode and a P electrode on the surface of the Al(x)Cu(1-x)N buffer layer. Compared with an AlN buffer layer, the Al(x)Cu(1-x)N buffer layer can obviously improve lattice stress between the substrate and the GaN layer, so that the performance of the LED device is promoted. Moreover, due to the fact that CuN is contained in the Al(x)Cu(1-x)N buffer layer, the stability of the Al(x)Cu(1-x)N buffer layer becomes low, and the Al(x)Cu(1-x)N buffer layer is easy to corrode chemically, so that the Al(x)Cu(1-x)N buffer layer can serve as a sacrificial layer when the substrate is peeled.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a PVD sputtering device, an LED device and a manufacturing method thereof. Background technique [0002] In the LED field, adding an AlN buffer layer on the substrate can effectively improve the photoelectric performance and equipment productivity of LED devices, and reduce production costs. Although the use of PVD (Physical Vapor Deposition, Physical Vapor Deposition) technology in the prior art to form an ALN ​​buffer layer on a patterned sapphire substrate can make the crystal quality of the subsequent GaN thin film better, but better crystal quality This will lead to greater stress between the GaN film and the sapphire substrate, resulting in problems such as warping of the subsequently grown GaN film, and affecting the performance of the LED device. Moreover, due to the stable chemical properties of the AlN thin film, it is difficult to etch and strip it by ch...

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Problems solved by technology

[0003] In view of this, the present invention provides a PVD sputtering device, an LED device and a manufacturing method thereof to solve the problems of large lattice stress and poor performance caused by adding an ALN ​​buffer layer on the substrate in the prior art

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