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Method for preparing porous boron-doped diamond electrode with nano diamond powder as counterfeit template

A nano-diamond powder, boron-doped diamond technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of high time-consuming and cost, complex three-dimensional BDD electrode process, etc. layer capacitance, improving repeatability, and reducing the effect of equivalent resistance value

Active Publication Date: 2019-09-13
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem solved by the present invention is that the process of preparing three-dimensional BDD electrodes in the prior art is complex, time-consuming and costly

Method used

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  • Method for preparing porous boron-doped diamond electrode with nano diamond powder as counterfeit template
  • Method for preparing porous boron-doped diamond electrode with nano diamond powder as counterfeit template
  • Method for preparing porous boron-doped diamond electrode with nano diamond powder as counterfeit template

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] a. Select nano-diamond powder with a negative surface potential and a particle size of 5-10 nm and put it into deionized water for 100 minutes of ultrasonic treatment to prepare a stable diamond powder suspension with a concentration of 1 g / L for use. Select 20mm×20mm×0.5mm silicon The slices were ultrasonically cleaned with acetone, alcohol, and deionized water for 15, 15, and 10 minutes, respectively, and then dried with nitrogen for later use;

[0051] b. Drop 2ml of the diamond suspension prepared in step a onto the silicon wafer substrate to form a uniform, continuous and flat suspension film, and then evaporate the water in the suspension by heating and evaporating at a constant temperature of 60°C on a hot plate, and the nano-diamond The powder self-assembles on the silicon substrate to form a flat porous film;

[0052] c. the silicon chip substrate that contains the porous film of nano-diamond powder prepared by step b is put into a microwave plasma chemical vap...

Embodiment 2

[0055] a. Select nano-diamond powder with a negative surface potential and a particle size of 30-60 nm and put it into deionized water for 100 minutes of ultrasonic treatment to prepare a stable diamond powder suspension with a concentration of 1 g / L for use. The slices were ultrasonically cleaned with acetone, alcohol, and deionized water for 15, 15, and 10 minutes, respectively, and then dried with nitrogen for later use;

[0056] b. Drop 2ml of the diamond suspension prepared in step a onto the silicon wafer substrate to form a uniform, continuous and flat suspension film, and then evaporate the water in the suspension by heating and evaporating at a constant temperature of 60°C on a hot plate, and the nano-diamond The powder self-assembles on the silicon substrate to form a flat porous film;

[0057] c. the silicon chip substrate that contains the porous film of nano-diamond powder prepared by step b is put into a microwave plasma chemical vapor deposition chamber and evac...

Embodiment 3

[0060] a. Select nano-diamond powder with a negative surface potential and a particle size of 5-10 nm and put it into deionized water for 100 minutes of ultrasonic treatment to prepare a stable diamond powder suspension with a concentration of 1 g / L for use. Silicon wafers were ultrasonically cleaned with acetone, alcohol, and deionized water for 15, 15, and 10 minutes, respectively, and then dried with nitrogen for later use;

[0061] b. Drop 2ml of the diamond suspension prepared in step a onto the silicon wafer substrate to form a uniform, continuous and smooth suspension film, and then evaporate the water in the suspension by heating and evaporating at a constant temperature of 65°C on a hot plate, and the nano-diamond The powder self-assembles on the silicon substrate to form a flat porous film;

[0062] c. the silicon chip substrate that contains the porous film of nano-diamond powder prepared by step b is put into a microwave plasma chemical vapor deposition chamber and...

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Abstract

The invention relates to a method for preparing a porous boron-doped diamond electrode with nano diamond powder as a counterfeit template and belongs to the technical field of electrode materials. Themethod aims at solving the technical problems that in the prior art, a three-dimensional BDD electrode preparing technology is complex, time is consumed, and the cost is high. The method for preparing the porous boron-doped diamond electrode with the nano diamond powder as the counterfeit template is disclosed. Nano diamond suspension liquid is dripped on a substrate, a suspension liquid film isformed, the suspension liquid film is heated and evaporated, nano diamond powder is formed on the substrate in a self-assembling manner to form a porous film, and then the porous film is put into a microwave plasma chemical vapor deposition chamber to be deposited to obtain the porous boron-doped diamond electrode. By means of the preparing technology, a template is omitted, a bonding agent is omitted, and a wet process corrosion step is omitted, the complexity and cost of the three-dimensional BDD electrode preparing technology are effectively lowered, the preparing repeatability is improved,and large-area and large-scale preparing of the BDD electrode is benefited.

Description

technical field [0001] The invention belongs to the technical field of preparation of electrode materials, and in particular relates to a method for preparing a porous boron-doped diamond electrode by using nanometer diamond powder as a pseudo template. Background technique [0002] Among many known carbon electrode materials, boron-doped diamond electrode (BDD) has high mechanical strength, wide potential window, low background current, good chemical stability, strong corrosion resistance, good biocompatibility and surface is not easy to be polluted, etc. It has broad application prospects in supercapacitors, electrochemical sensors, electroanalysis, sewage treatment and other fields. However, the traditional planar BDD electrodes are affected by low space-time yield and poor mass transfer effect, which greatly limits the application of BDD electrodes. Improving the specific surface area of ​​BDD electrodes is the main way to solve the above problems, which can be achieved...

Claims

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Application Information

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IPC IPC(8): C23C16/511C23C16/02C23C16/04C23C16/27
CPCC23C16/0272C23C16/042C23C16/274C23C16/278C23C16/511
Inventor 杜凯汪建何智兵王涛何小珊易泰铭
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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