Temperable LOW-E glass and preparation method thereof
A glass and glass matrix technology, applied in the field of temperable LOW-E glass and its preparation, can solve the problems of large color changes and achieve the effect of ensuring consistency
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Embodiment 1
[0033] The structure of the composite film layer 200 on the surface of the glass substrate 100 in this example is: SiNx layer / TiOx layer / ZnOx layer / Ag layer / NiCr layer / AZO layer / SiNx layer / NiCr layer / SiNx layer / ZnOx layer / Ag layer / NiCr layer / AZO layer / SiNx layer.
[0034] The thickness of each film layer in the composite film layer 200 is 34.2nm / 9.8nm / 15.2nm / 9.2nm / 1.8nm / 8.9nm / 29.3nm / 1.1nm / 33.7nm / 15.0nm / 10.1nm / 1.3nm / 9.2nm nm / 27.4nm.
[0035] The preparation method of temperable LOW-E glass in this embodiment is as follows:
[0036] 1. The first dielectric layer 201 is plated on the glass substrate 100 by magnetron sputtering process: under the control of an intermediate frequency AC power supply, the silicon target is sputtered in a mixed atmosphere of argon and nitrogen (Ar:N2=9:7) Spray deposition, the first dielectric layer with a film thickness of 34.2nm is a SiNx layer;
[0037] 2. Coating the transition layer 202 on the first dielectric layer by magnetron sputtering: U...
Embodiment 2
[0060] The structure of the composite film layer 200 on the surface of the glass substrate 100 in this example is: SiNx layer / TiOx layer / ZnOx layer / Ag layer / NiCr layer / AZO layer / SiNx layer / NiCr layer / SiNx layer / ZnOx layer / Ag layer / NiCr layer / AZO layer / SiNxOy layer.
[0061] The thickness of each film layer in the composite film layer 200 is 29.7nm / 4.6nm / 14.8nm / 7.1nm / 1.8nm / 8.8nm / 30.8nm / 1.3nm / 34.3nm / 15.9nm / 9.8nm / 1.3nm / 9.3nm nm / 25.6nm.
[0062] The preparation method of temperable LOW-E glass in this embodiment is as follows:
[0063] 1. The first dielectric layer 201 is plated on the glass substrate 100 by magnetron sputtering process: under the control of an intermediate frequency AC power supply, the silicon target is sputtered in a mixed atmosphere of argon and nitrogen (Ar:N2=9:7) Spray deposition, depositing a first dielectric layer 201 (SiNx layer) with a film thickness of 29.7 nm;
[0064] 2. Using the magnetron sputtering process, the transition layer 202 is plated on...
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