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Method for processing silicon nano cylinder by electron beam lithography

A technology of electron beam lithography and electron beam exposure, applied in the field of lithography, can solve problems such as increasing the exposure time of patterns, and achieve the effect of improving the efficiency of direct writing of patterns

Active Publication Date: 2019-09-17
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Compared with right-angle structures such as lines and squares, the cylindrical structure has curved edges, and the electron gun needs to be moved and switched multiple times, which greatly increases the exposure time of the graphics.

Method used

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  • Method for processing silicon nano cylinder by electron beam lithography
  • Method for processing silicon nano cylinder by electron beam lithography
  • Method for processing silicon nano cylinder by electron beam lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] 1. Cleaning and gluing of silicon wafers:

[0048] Place the wafer in concentrated H 2 SO 4 :H 2 o 2 =3:1 solution heated at 90°C for 10 minutes. This was followed by sonication for 5 minutes with acetone and 5 minutes with isopropanol.

[0049] Glue coating: use an oxygen plasma degumming machine to treat for 30s before coating to carry out surface modification. Use All resist series AP 6200.09 electron beam photoresist (positive resist), rotate at 4000rpm, bake at 150°C for 60s, and the final thickness of the resist is about 200nm.

[0050] 2. EBL exposure:

[0051] Since the electrons emitted by the EBL will be scattered forward and back, the electrons will diffuse to the area outside the exposure pattern. This effect is called the proximity effect, such as figure 2 shown. In the case of using the same accelerating voltage and photoresist, the area of ​​electron scattering is mainly determined by the two parameters of exposure current (I) and exposure dose (...

Embodiment 2

[0064] On the basis of Example 1, the EBL exposure is changed to:

[0065] Layout design cylinder diameter is 100nm, electron beam step size (Beam step size 20nm), exposure dose 220μC / cm 2 , Exposure current 15nA. Development: methyl isobutyl ketone (MIBK) 70s, isopropanol (IPA) 60s.

[0066] After etching, see Figure 12 , the cylinder diameter is 220nm.

Embodiment 3

[0068] Other steps are identical with embodiment 1.

[0069] 2. EBL exposure:

[0070] The diameter of the layout design cylinder is 120nm, the electron beam step size (Beam step size) is 20nm, and the exposure dose is 220μC / cm 2 , Exposure current 15nA. Development: methyl isobutyl ketone (MIBK) 70s, isopropanol (IPA) 60s.

[0071] After etching, see Figure 13 , the cylinder diameter is 185nm.

[0072] Therefore, the final sample diameter can be adjusted by adjusting the layout diameter.

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Abstract

The invention provides a method for processing a silicon nano cylinder by electron beam lithography, comprising a silicon wafer coating step of coating the surface of a silicon wafer with an electron beam photoresist; an electron beam exposure and development step of direct writing exposing the silicon wafer coated with the electron beam photoresist twice and developing the silicon wafer to obtain at least two rectangular patterns vertically overlapping each other; a thermal reflow step of heating the developed silicon wafer; and an etching step of etching the thermally reflowed silicon wafer. The method converts nano cylinder fabrication into grating direct writting by an electron beam exposure proximity effect and the thermal reflow method, shortens the time of direct writing a pattern of 1 mm2 to 20 minutes which is 1 / 80 of the original time, and greatly improves the pattern direct writing efficiency.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a method for processing silicon nanometer cylinders by using electron beam photolithography. Background technique [0002] As a common nanostructure, nanopillars are widely used in various sensors, solar cells, and diffractive optical elements. Small-sized and high-density semiconductor silicon nanopillars can achieve high local electromagnetic enhancement under the irradiation of specific wavelength lasers. [0003] Liu Jing and others disclosed in the patent with the publication number CN103390657A that through nano-island lithography technology and plasma etching technology, the use of cesium chloride nano-islands to realize the processing of silicon nano-columns, but the diameter of the cylinders is relatively large (350 nanometers), And the cylinder edge quality is poor. Yang Shaoguang et al disclosed in the patent publication No. CN1278024A that an aluminum nanoc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/16G03F7/40
CPCG03F7/16G03F7/40G03F7/70383G03F7/70441
Inventor 程秀兰王晓东徐剑权雪玲李雅倩王英
Owner SHANGHAI JIAO TONG UNIV