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Novel logarithmic absolute value local active memristor circuit model

A circuit model and memristor technology, applied in the field of local active memristor models, can solve the problems of lack of mathematical models and physical models, and achieve the effect of simple structure

Active Publication Date: 2019-09-17
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Practical local active memristor devices have been discovered, but not yet commercialized, and there is still little research on them, and there is also a lack of mathematical and physical models

Method used

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  • Novel logarithmic absolute value local active memristor circuit model
  • Novel logarithmic absolute value local active memristor circuit model
  • Novel logarithmic absolute value local active memristor circuit model

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Embodiment Construction

[0019] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] The theoretical starting point of the present invention is a novel voltage-controlled memristor mathematical model defined below:

[0021]

[0022] i(t) and u(t) represent the current and voltage of the local active memristor, and the variable x represents the state of the memristor.

[0023] According to the mathematical model of local active memristor, its equivalent circuit model can be designed, and its principle block diagram is as follows figure 1 shown.

[0024] Such as figure 1 As shown, the analog equivalent circuit of the voltage-controlled partial active memristor in this example includes integrated operational amplifier U1, integrated operational amplifier U2, integrated operational amplifier U3, integrated operational amplifier U4, multipliers U5, U6, U7, U8 and a small amount of resistors , capacitance, integrat...

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Abstract

The invention discloses a novel logarithmic absolute value local active memristor circuit model. An integrated operational amplifier U1 and a multiplier U8 are respectively connected with an input end; the integrated operational amplifier U1 is used for realizing inverse addition operation and integral operation and returning an output signal to the multiplier U5; the integrated operational amplifier U2 is used for realizing inverse amplification operation and returning the output signal to the integrated operational amplifier U1, and finally obtaining a state variable for controlling a memristor value. The integrated operational amplifier U3 is used for realizing inverse addition operation, inverse amplification operation and absolute value operation; the integrated operational amplifier U4 is used for realizing logarithm operation and inverse amplification operation to obtain a required memristor control function, and the multiplier U8 is used for multiplying the memristor control function by an input voltage quantity to obtain a final memristor current quantity. The novel logarithmic absolute value local active memristor circuit model is used for simulating the volt-ampere characteristic of the local active memristor and replacing an actual local active memristor to carry out experiment, application and research.

Description

technical field [0001] The invention belongs to the technical field of electronic circuit design and relates to a local active memristor model, in particular to the design and realization of a mathematical model and a circuit model of a logarithmic absolute value type voltage-controlled local active memristor. Background technique [0002] Memristor is the fourth basic circuit element besides resistors, capacitors and inductors, and it is a nonlinear resistor with memory. The concept of the memristor was proposed in 1971, and the actual memristor element was not discovered until 2008 in the HP laboratory. [0003] Memristor has the characteristics of memory resistance, and has important application prospects in the fields of non-volatile memory, digital logic circuit, artificial neural network and so on. Memristors are divided into passive memristors and local active memristors. Local active memristors have the ability to amplify weak signals and generate complex phenomena....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/36Y02D10/00
Inventor 王君兰王光义谷文玉杨柳牛小燕
Owner HANGZHOU DIANZI UNIV
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