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BaZr0.35Ti0.65O3 epitaxial thin film and preparation method thereof

A bazr0.35ti0.65o3, epitaxial thin film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of inability to large energy storage density, achieve excellent thermal stability, high energy storage Effects of density and energy storage efficiency, high insulation

Active Publication Date: 2019-09-20
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] BYZGR 0.35 Ti 0.65 o 3 (ie BZT) The dielectric constant of the relaxor ferroelectric is large, and it changes little in a wide temperature range, but the breakdown field strength is usually inversely proportional to the dielectric constant, that is to say, in a single material is It is impossible to achieve both a large dielectric constant and a large breakdown field strength, and it is impossible to achieve a large energy storage density in a wide temperature range

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  • BaZr0.35Ti0.65O3 epitaxial thin film and preparation method thereof
  • BaZr0.35Ti0.65O3 epitaxial thin film and preparation method thereof
  • BaZr0.35Ti0.65O3 epitaxial thin film and preparation method thereof

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Embodiment Construction

[0036] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0037] BaZr of the present invention 0.35 Ti 0.65 o 3 The epitaxial film is a lead-free epitaxial film with high breakdown field strength and excellent wide-temperature energy storage characteristics. It is also a lead-free epitaxial film of the BZT system. The preparation method is as follows:

[0038] (1) First, according to the chemical formula BaZr 0.35 Ti 0.65 o 3 (i.e. BZT) and doped with 1% SiO 2 BaZr 0.35 Ti 0.65 o 3 (i.e. SiO 2 : BZT, in mass percent, BaZr 0.35 Ti 0.65 o 3 Medium SiO 2 The doping amount is 1%) to weigh an appropriate amount of 4-5N grade BaCO 3 High purity powder, ZrO 2 High purity powder, TiO 2 and SiO 2 High-purity powder, the mixture of the above four high-purity powders is subjected to ball milling, pre-sintering, granulation, molding and sintering processes, and is prepared into BZT ceramic targe...

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Abstract

The invention relates to the field of energy-storage thin films, and particularly discloses a BaZr0.35Ti0.65O3 epitaxial thin film and a preparation method thereof. The BaZr0.35Ti0.65O3 epitaxial thin film comprises an Nb:SrTiO3 substrate and a thin film, wherein the thin film is arranged on the upper surface of the Nb:SrTiO3 substrate and comprises a BaZr0.35Ti0.65O3 thin film doped with 1 percent of SiO2 and a BaZr0.35Ti0.65O3 thin film. The thin film provided by the invention has high breakdown field strength and a good wide-temperature energy storage characteristic.

Description

technical field [0001] The invention relates to the field of energy storage thin film materials, in particular to a BaZr 0.35 Ti 0.65 o 3 Epitaxial thin film and method for its preparation. Background technique [0002] The increasingly severe energy crisis and environmental problems reflected by phenomena such as "energy war" and "smog on all sides" have become the primary issues that plague economic and social development today. As one of the main energy storage components, dielectric capacitors can be quickly charged and discharged within milliseconds or even microseconds, providing up to 10 8 The power density of W / kg is significantly higher than that of batteries and electrochemical capacitors (generally lower than 500W / kg). Moreover, the dielectric capacitor also has the advantages of anti-cycle aging, strong environmental adaptability, and stable performance. These characteristics make it incomparable in new energy power generation systems in the civilian field, ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/08C23C14/3414C23C14/3457C23C14/35
Inventor 马春蕊刘明乔文婧
Owner XI AN JIAOTONG UNIV
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