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Optoelectronic device

An optoelectronic device and device technology, applied in laser parts, lasers, photovoltaic power generation, etc., can solve problems such as hindering the development of silicon-based devices

Inactive Publication Date: 2019-09-20
UNIVERSITY OF SURREY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, silicon is an indirect bandgap semiconductor material in which fast, nonradiative recombination of charge carriers is the dominant process, and this tends to hinder the development of such silicon-based devices

Method used

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Embodiment Construction

[0034] now refer to figure 1 , the optoelectronic device 10 has the form of a light emitting diode (LED). The LED has a p-n junction 11 defined by a region 12 of n-type silicon and a region 13 of p-type silicon. In the present embodiment, region 12 is doped with phosphorus atoms (P) and region 13 is doped with boron atoms (B). However, it should be appreciated that other suitable dopants known to those skilled in the art may be used instead.

[0035] The LED also has a photosensitive region 14 located in a p-type silicon region 13 as close as possible to the depletion region of the p-n junction at zero bias. In this embodiment, the p-type silicon in region 13 is doped with trivalent ions Eu of rare earth element europium 3+ to form the photosensitive area 14 .

[0036]Ohmic contacts 15, 16 are provided on the front and rear surfaces 17, 18 of the device to enable a bias voltage to be applied across the p-n junction. In the present embodiment, the ohmic contact 15 provided...

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Abstract

An optoelectronic device has a photoactive region containing semiconductor material doped with ions of a rare earth element. Characteristic transitions associated with internal energy states of the rare earth dopant ions are modified by direct interaction of those states with an energy state in the semiconductor band structure. Eu+ and Yb+ doped silicon LEDs and photodetectors are described. The LEDs are emissive of radiation in the wavelength range 1300 nm to 1600 nm, important in optical communications.

Description

technical field [0001] The present invention relates to optoelectronic devices; in particular, but not exclusively, to silicon-based optoelectronic devices. Background technique [0002] There is an increasing need to develop silicon-based optoelectronic devices, especially light sources such as optical emitters and optical amplifiers, with the goal of realizing fully integrated silicon photonic platforms. However, silicon is an indirect bandgap semiconductor material in which fast, non-radiative recombination of charge carriers is the dominant process, and this tends to hinder the development of such silicon-based devices. A number of different approaches have been taken to mitigate this problem. [0003] US Patent No. 7,274,041 B2 describes an optoelectronic device fabricated from silicon that includes a strain field generated by an array of dislocation loops. The strain field is effective for steric confinement and thus promotes radiative recombination of charge carrier...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/34H01L31/0288H01S5/30
CPCH01L31/0288H01L31/103H01L31/105H01L31/107H01L31/108H01L33/34H01L33/343H01S3/1603H01S3/1618H01S3/1628H01S5/305Y02E10/50
Inventor K.P.霍梅伍德R.M.格威廉
Owner UNIVERSITY OF SURREY