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Semiconductor device

A semiconductor and chip technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increased heat loss of semiconductor devices

Pending Publication Date: 2019-10-08
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a tendency that the heat loss of the semiconductor device also becomes large.

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0029] figure 1 (a) is a bottom view illustrating the semiconductor device of the present embodiment. figure 1 (b) is figure 1 The cross-sectional view at line AA of (a).

[0030] Such as figure 1 (a) and figure 1 As shown in (b), the semiconductor device 10 of this embodiment includes a semiconductor chip 11 , a heat sink 12 , and a sealing resin 18 . The semiconductor device 10 further includes a dummy chip 13 , a bonding member 14 , a substrate 15 , bonding wires 16 , and connection terminals 17 . The semiconductor device 10 of this example is a BGA (Ball Grid Array) package with a heat sink. As a package with a heat sink, it is not limited to BGA, and can also be applied to LGA (Land Grid Array, flat grid array), SOP (Small Outline Package, small outline package), QFP (Quad Flat Package, square flat package) ), QFN (Quad For Non-lead package, square leadless package), DFN (Dual For Non-leadpackage, double-lead package), etc.

[0031] Hereinafter, a plane including t...

no. 2 Embodiment approach

[0062] In the case of connecting a semiconductor chip to a die liner, heat dissipation performance can be improved by using a metal fiber sheet impregnated with a thermosetting resin instead of using a bonding member such as Ag paste between the semiconductor chip and the die liner .

[0063] Figure 4 exemplifies the semiconductor device of this embodiment and corresponds to figure 1 A cross-sectional view at the position of the AA line in (a).

[0064] Such as Figure 4 As shown in , the semiconductor device 210 of this embodiment includes a semiconductor chip 11, a bonding member 214, and a mold liner 15a. The bonding member 214 is provided between the semiconductor chip 11 and the mold pad 15a. The semiconductor chip 11 is connected to the die pad 15 a via the bonding member 214 on the back surface (second surface) 11 b.

[0065] The joining member 214 comprises a metal fiber sheet. The metal fiber sheet is impregnated with a thermosetting resin. The metal fiber she...

no. 3 Embodiment approach

[0113] The metal fiber sheet impregnated with a thermosetting resin may be formed into a lead frame shape and used as a die liner or a connection terminal.

[0114] Figure 11 (a) is equivalent to the semiconductor device of this embodiment figure 1 A cross-sectional view at the position of the AA line in (a). Figure 11(b) is equivalent to the semiconductor device of the comparative example figure 1 A cross-sectional view at the position of the AA line in (a).

[0115] Such as Figure 11 As shown in (a), the semiconductor device 310 includes a semiconductor chip 11 and a mold liner 315 . The semiconductor chip 11 is attached to the mold pad 315 . The die liner 315 is formed by cutting a lead frame cut from a metal sheet impregnated with a thermosetting resin together with the connection terminal 317 .

[0116] Since the mold liner 315 contains metal fibers, it has low thermal resistance. By adjusting the thickness of the mold liner 315, the desired low thermal resistan...

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Abstract

According to one embodiment, a semiconductor device includes a first semiconductor chip, a heat dissipation member provided on one surface of the first semiconductor chip and connected to the first semiconductor chip, and a sealing resin sealing the first semiconductor chip and the heat dissipation member. The heat dissipation member includes mutually interlaced metal fibers and a thermosetting resin.

Description

[0001] Associate application [0002] This application enjoys the priority of Japanese Patent Application No. 2018-53249 (filing date: March 20, 2018) as the basic application. This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor device and a method of manufacturing the semiconductor device. Background technique [0004] The functions and performance of semiconductor devices have been significantly improved, and the increase in output current and voltage is also progressing. Therefore, the heat loss of the semiconductor device also tends to increase. For such a semiconductor device, the heat dissipation performance of its package also needs to be improved. Contents of the invention [0005] Embodiments provide a semiconductor device having a package with good heat dissipation performance and a method of manufacturing the se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/49H01L23/495H01L21/56H01L23/29H01L23/31
CPCH01L23/3675H01L23/367H01L23/3737H01L23/3107H01L23/293H01L23/49548H01L23/49H01L21/56H01L23/4334H01L23/49513H01L2224/48095H01L2224/32245H01L2224/73265H01L2224/48247H01L2224/92247H01L2224/83192H01L2224/40245H01L2224/49171H01L2224/45014H01L2224/16245H01L2924/00014H01L2924/181H01L2924/18161H01L2924/15311H01L2224/32225H01L2224/48227H01L2924/18301H01L2224/49112H01L23/49816H01L2224/29339H01L2224/29347H01L24/29H01L2224/2929H01L2224/83862H01L24/83H01L24/73H01L24/48H01L24/32H01L24/92H01L2224/83455H01L2224/83464H01L2224/83444H01L2224/83101H01L24/84H01L2224/2612H01L2224/73221H01L2224/45099H01L2924/00012H01L2924/00H01L23/49861H01L23/3128H01L24/37H01L23/49582H01L23/49568H01L2224/3729H01L2224/37347H01L2224/73263H01L2224/48175H01L2224/40175
Inventor 唐牛久美子池水守彦井守义久岸博明今田知彦清水晓人
Owner KK TOSHIBA