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Memory and method of forming the same

A memory and patterning technology, applied in the manufacturing of semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve problems such as poor performance of split-gate flash memory, and achieve increased coupling area, improved coupling rate, and good performance. Effect

Active Publication Date: 2021-07-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of existing split-gate flash memory is poor

Method used

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  • Memory and method of forming the same

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] As mentioned in the background, the performance of flash memory is poor.

[0029] figure 1 It is a schematic cross-sectional view of a flash memory.

[0030] A type of flash memory, please refer to figure 1 , including: a semiconductor substrate 100, the semiconductor substrate 100 includes an erasing region A and a floating gate region B, the floating gate region B is adjacent to the erasing region A and is located on both sides of the erasing region A; The erasing gate structure 130 on the erasing region A of the substrate 100; the floating gate structure 120 respectively located on the floating gate region B of the semiconductor substrate 100; the word line structure 140 located on one side of the floating gate structure 120, The floating gate structure 120 is located between the erasing gate structure 130 and the word line structure 140; the source 110 is located in the erasing region A of the semiconductor substrate 100; the bit line structure 150 is located in t...

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Abstract

A memory and a method for forming the same, wherein the method includes: providing a base, the base has a first fin, and the first fin includes: an erasing area and a floating gate area, and the floating gate area and the erasing area Adjacent, and the floating gate regions are respectively located on both sides of the erasing region, the substrate also has second fins, and in the direction perpendicular to the extension of the first fins, the second fins are respectively located on the erasing On both sides of the area, the erasing area and the surface of the second fin have a sacrificial layer; a floating gate structure spanning the floating gate area is formed on the substrate, and the surface of the floating gate structure is lower than the sacrificial layer. layer top surface; remove the sacrificial layer, form an opening in the floating gate structure and the first spacer, the bottom of the opening exposes the surface of the erasing region and the surface of the second fin; The gate structure is removed, and the surface of the erasing gate structure is flush with the top surface of the first spacer. The performance of the memory formed by the method is better.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a memory and a forming method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits, and digital / analog hybrid circuits. Among them, memory is an important type of digital circuits. In memory, the development of flash memory (flash memory, referred to as flash memory) is particularly rapid in recent years. The main feature of flash memory is that it can keep storing information for a long time without power on, and has the advantages of high integration, fast storage speed, easy erasing and rewriting, etc. Therefore, it has been widely used in many fields such as microcomputers and automatic control. Wide range of applications. [0003] Flash memory is classified into two types: stack gate flash memory and split gate flash memory. The stacked ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517H01L27/11524H10B41/00H10B41/35
CPCH10B41/00H10B41/35H01L29/66545H01L29/42328H01L29/66825H01L29/40114H01L29/7885H01L29/66795H01L29/785H10B41/30H01L21/26513H01L21/76805H01L21/7684H01L21/76895H01L23/535H01L29/7851H01L29/7881
Inventor 于涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP