High-gain bandwidth product optical detector and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a high-gain bandwidth product optical detector, and relates to the technical field of optical detectors. The optical detector comprises the followingsteps: S1, sequentially growing a buffer layer, a first gradient layer, an active layer, a second gradient layer, a first functional layer, a second functional layer, a diffusion control layer and a top layer on a substrate to form an epitaxial structure; S2, performing a first zinc diffusion process on the whole epitaxial structure to diffuse zinc to the diffusion control layer; S3, shielding part of the epitaxial structure, and performing a second zinc diffusion process on the unshielded part of the epitaxial structure so as to diffuse zinc to the second gradient layer to form TWSOA, whereinWGAPD is formed on the shielded part of the epitaxial structure; S4, etching the epitaxial structure to separate the TWSOA from the WGAPD, and forming a strip-shaped TWSOA and a strip-shaped WGAPD; and S5, respectively manufacturing electrodes of the TWSOA and the WGAPD. The invention also discloses the optical detector with high-gain bandwidth product. The gain bandwidth product of the optical detector provided by the invention can reach 1000GHz.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photodetector with high gain-bandwidth product and a manufacturing method thereof. Background technique [0002] With the rapid development of the Internet of Things and 5G, the bandwidth requirements of optical fiber communication systems continue to increase. At present, the optical detector used in the high-speed optical signal receiving module adopts a planar avalanche photodiode (APD, Avalanche Photo Diode), which has internal gain and can amplify the current signal. The APD with a rate of 10Gbps has been widely used. However, the design and manufacture of APDs with a rate above 25Gbps is relatively difficult, which has become a limiting factor in the transmission rate of optical communication systems. The bandwidth of APD is mainly limited by the transit time of photogenerated carriers and the avalanche establishment time. At present, the 10Gbps APD adopts the ve...

AI Technical Summary

Problems solved by technology

WGAPD and ECAPD adopt a waveguide structure, so that light is incident from the side of the device, and a thinner active layer can be used without reducing the quantum efficiency to increase the bandwidth. The bandwidth of this type of APD can reach 35GHz, but the gain is low, and the gain bandwidth Product is about 140GHz

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