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an ag-cuo-b 2 o 3 Brazing filler metal, its preparation method and its method of connecting sapphire

An ag-cuo-b2o3, sapphire technology, applied in welding/cutting media/materials, welding equipment, manufacturing tools, etc., can solve the problems of high brittleness, high thermal expansion coefficient strength of base metal, poor joint performance, etc., and achieve interface defects The effect of less, improved joint performance and low cost

Inactive Publication Date: 2020-11-13
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that in the existing sapphire brazing connection process, the general solder cannot wet the sapphire base material and the thermal expansion coefficient of the base material is anisotropic, the strength is high, the brittleness is large, and the joint performance is poor, and the design is proposed. Preparation of a Ag-CuO-B 2 o 3 A new type of solder and its method of connecting sapphire

Method used

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Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0021] Specific implementation mode one: a kind of Ag-CuO-B in this implementation mode 2 o 3 A new type of solder, made of Ag powder, CuO powder and B 2 o 3 The powder and the binder are mixed according to a certain ratio; the specific proportion is 5-15 parts of CuO powder, 60-80 parts of Ag powder, 5-35 parts of B 2 o 3 Composition; Wherein, the Ag-CuO-B 2 o 3 The mass ratio of the mixed powder to the binder is 1:(0.1-0.2).

specific Embodiment approach 2

[0022] The beneficial effect of this embodiment is: the Ag-CuO-B provided by the present invention 2 o 3 When the new solder is used to connect sapphire, it can better wet the surface of the sapphire base material, and can effectively reduce the thermal stress caused by the anisotropy of the thermal expansion coefficient of the base material. The test of residual stress shows that adopting commonly used Ag-CuO solder to braze under the same process parameters, the residual stress in the joint after welding is then up to 90MPa, and adopts Ag-CuO-B of the present invention 2 o 3 The joint residual stress of the new solder jointed sapphire is only 15MPa, and the obtained weld interface has fewer defects, the room temperature shear strength is as high as 66MPa, and the joint performance is significantly improved. In addition, using Ag-CuO-B of the present invention 2 o 3 The process of connecting sapphire with new solder is simple and the cost is low. Specific embodiment two:...

specific Embodiment approach 3

[0023] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the Ag-CuO-B 2 o 3 The mass ratio of mixed powder to binder is 1:0.15. Others are the same as in the first or second embodiment.

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PUM

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Abstract

The invention provides an Ag-CuO-B2O3 brazing filler metal, a preparation method thereof and a method for connecting a sapphire by utilizing the Ag-CuO-B2O3 brazing filler metal, and relates to the field of welding materials and technologies. The problems that in an existing sapphire brazing connection process, the sapphire base material cannot be wetted by a common solder and the base material isanisotropic in thermal expansion coefficient, high in strength, and large in brittleness, so that the performance of a joint is poor needs to be solved, so that Ag-CuO-B2O3 brazing paste is characterized by being prepared by mixing Ag powder, CuO powder, B2O3 powder and a binding agent according to a certain ratio. When the related brazing method is used for connecting the sapphire, the technology is simple, the cost is low, the surface of the sapphire base material can be well wetted, the thermal stress generated due to the anisotropy of the thermal expansion coefficient of the base materialcan be effectively reduced, and the joint performance is remarkably improved.

Description

technical field [0001] The invention relates to the field of welding materials and technology. Background technique [0002] Sapphire (single crystal α-Al 2 o 3 ), commonly known as corundum, belongs to simple coordination oxide crystals. Its stable crystal structure, excellent mechanical properties, and good thermal properties make sapphire a semiconductor GaN / Al 2 o 3 , Light-emitting diodes (LED), large-scale integrated circuits SOI and SOS, and superconducting nanostructured thin films have become the most ideal substrate materials, and are widely used in military devices, satellite technology, laser window materials and other fields. [0003] In recent years, with the development of science and technology, new requirements have been put forward for the size and quality of sapphire in the application field. Connecting sapphire with high quality and low cost has become an urgent need for the development of today's society. The sapphire window connected by conventiona...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K35/30B23K35/14B28D5/00
CPCB23K35/025B23K35/3006B28D5/00
Inventor 林盼盼林铁松何鹏李昊岳
Owner HARBIN INST OF TECH