Induction coil set and reaction chamber

Abstract

The present invention provides an induction coil group and a reaction chamber. The induction coil group includes an induction coil arranged above the dielectric window of the reaction chamber. The two ends of the induction coil are power input terminals and ground terminals respectively. The vertical distance between the two ends and the dielectric window is greater than the vertical distance between the part between the two ends of the induction coil and the dielectric window. The induction coil group and the reaction chamber provided by the present invention can reduce the capacitive coupling at both ends of the induction coil on the premise of ensuring that the coupling strength of the radio frequency magnetic field meets the requirements, thereby reducing the sputtering of the dielectric window and improving the process results .

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an induction coil group and a reaction chamber. Background technique [0002] RF inductively coupled plasma (Inductive Coupled Plasma, hereinafter referred to as ICP) has higher discharge efficiency than Capacitance Coupled Plasma (hereinafter referred to as CCP), and can produce high-density plasma at lower pressure (1-100mTorr). Plasma, therefore, ICP equipment is widely used in etching, deposition and other processes in the semiconductor field. In the ICP device, the radio frequency current flowing in the induction coil can excite the radio frequency magnetic field in space, and generate an angular electric field in the plasma to heat electrons through Faraday electromagnetic induction, thereby generating a high-density plasma. [0003] figure 1 It is a sectional view of an existing ICP reaction chamber. see figure 1 , the reaction chamber 1 includes a dielectric...

AI Technical Summary

Problems solved by technology

[0004] However, since the potential of the planar coil 2 at the power input terminal A and the series capacitor terminal B is relatively high, and the distance from the plasma is relatively close (the vertical distance between the power input terminal A and the serial capacitor terminal B is relatively small), the power input terminal A and the serial capacitor terminal A strong capacitive coupling is formed between the capacitor terminals B and the ground, which may cause a high-voltage sheath to be formed on the lower surface of the dielectric window 3, and the high-voltage sheath will cause the lower surface of the dielectric window 3 to be sputtered, thereby Generates sputtering contamination that affects process results

Images