Tunneling field effect transistor, manufacturing method thereof, and chip

Abstract

The application discloses a tunneling field effect transistor, a manufacturing method thereof, and a chip, which belong to the technical field of semiconductors. The method includes: forming a mask structure on a substrate, and performing a first implantation treatment of first ions on the substrate; forming a first spacer on the substrate, and performing a second implantation treatment of first ions on the substrate; covering the region where the first ions have been implanted; thinning the mask structure; forming a second side wall on the thinned mask structure, and etching a part of the mask structure not covered by the second side wall; forming a third side wall on the substrate, and performing a third implantation treatment of second ions on the substrate; removing the structure on the region where the gate region is to be formed in the substrate; forming a gate region, a source electrode and a drain electrode on the substrate. The present application solves the problem that the TFET with a smaller size cannot be manufactured in the related art, and can manufacture a TFET with a smaller size. The present application is used for the manufacture of the TFET.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a tunneling field effect transistor, a manufacturing method thereof, and a chip. Background technique [0002] Field effect transistors are voltage-controlled semiconductor devices that have the advantages of high input resistance, low noise, low power consumption, and easy integration. They are the main components of processor chips and memory chips. [0003] Commonly used field effect transistors generally include Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and Tunneling Field Effect Transistor (Tunneling Field Effect Transistor, TFET). Among them, the subthreshold swing (English: subthreshold swing; abbreviation: SS) of MOSFET is larger, and the SS of TFET is smaller, and the smaller the SS, the smaller the power consumption of the field effect tube, so the power consumption of the chip composed of TFET smaller. In related technologies, multip...

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Problems solved by technology

[0005] The present application provides a tunneling field effect transistor, its manufacturing method, and chip, which can solve the problem that a small-sized TFET cannot be manufactured in the related art, and the technical solution is as follows:

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