Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers

A ferromagnetic resonance and measurement system technology, applied in magnetic resonance measurement, electron paramagnetic resonance measurement, magnetic variable measurement, etc., can solve impractical, destructive, time-consuming and other problems, and achieve optimal production capacity and easy Applied effect

Inactive Publication Date: 2019-11-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] Due to the destructive, impractical, and time-consuming nature of conventional ferromagnetic resonance, this technique does not meet demand, making ferromagnetic resonance not widely accepted as a characterization tool in the magnetic data storage industry

Method used

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  • Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
  • Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
  • Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers

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Embodiment Construction

[0038] The present disclosure is a scanning ferromagnetic resonance system for measuring the magnetic properties of magnetic thin or multi-film layers at multiple locations across a wafer, including the effective anisotropy field H K With a damping constant α, these positions are identified by their (x,y) coordinates. The scanning ferromagnetic resonance system is fully automated and has a base plate with a central opening through which both ends of a waveguide transmission line (WGTL) are suspended and attached to radio frequency connectors, which are securely secured to the base plate. It should be understood that the word "radio frequency connector" includes various forms of radio frequency connectors, including the terminal radio frequency connector mentioned in the exemplary embodiment. However, other embodiments may include other types of RF connectors, which are used in the prior art and not described here. The x-axis and y-axis coordinates of the wafer under test (WUT...

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Abstract

A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and / or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locationson the magnetic film.

Description

technical field [0001] The present disclosure relates to a measurement system and method for measuring magnetism in magnetic films and multi-film layers, and more particularly to a waveguide transmission line (WGTL) installed on a platform, and the waveguide transmission line is installed in an electrical probe table to measure the entire crystal circles for fully automated ferromagnetic resonance measurements without the need to cut wafers in engineering and production environments. Background technique [0002] Magnetic thin films and multi-layers play an important role in various magnetic storage devices, such as magnetic hard disk drive (HDD), magnetic random access memory (MRAM), spin torque oscillator (spin torque oscillator, STO ) and magnetic domain wall devices. In order to develop and optimize these devices, a characterization step of the magnetic thin film stack is necessary. All fundamental magnetic parameters such as crystalline anisotropy, surface or interfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N24/08G01R33/30G01R31/3185G01R31/315H01L21/66
CPCG01R31/318511G01N24/10G01R33/30G01R33/60G01R33/345H01P5/18H10N50/10H10N50/85
Inventor 圣地牙哥·山诺·古山路克·汤马斯李松真杰诺
Owner TAIWAN SEMICON MFG CO LTD
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