This invention discloses a
wafer polishing method and a polished
wafer. The
polishing method sequentially includes a first
polishing, a second polishing, a third polishing, a fourth polishing, and a fifth polishing. The first, second, third, and fourth polishing steps polish the
metal film on the
wafer surface. After the fourth polishing, all the
metal film on the wafer surface is polished. The polished thickness satisfies the following conditions: T0 = 2 × T1 - T2 - 0.2; T1 = 0.7 × T0 - 0.2; T2 = 4 × T3 - 0.4; where T0 is the initial thickness of the
metal film on the wafer surface, T1 is the remaining metal film thickness after the first polishing, T2 is the remaining metal film thickness after the second polishing, and T3 is the remaining metal film thickness after the third polishing. This invention employs a five-step polishing process, where the first four steps polish the metal film on the wafer surface to a specific thickness, ultimately improving polishing efficiency and simultaneously improving surface defects on the wafer.