Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a semiconductor layer, a source, a gate, a drain, and at least two junction terminals. A semiconductor layer is fabricated on one side of the substrate, the semiconductor layer includes a channel layer and a barrier layer, and a two-dimensional electron gas is formed at the interface between the channel layer and the barrier layer. The source, gate and drain are fabricated on the side of the semiconductor layer away from the substrate. At least two drain junction terminals arranged at intervals are located on the side of the semiconductor layer away from the substrate and between the gate and the drain, and the at least two drain junction terminals are respectively connected to the drain Extremely shorted. The concentration of the two-dimensional electron gas corresponding to the interval region between the drain junction terminals will not decrease, so that the on-resistance of the semiconductor device will not increase, the working efficiency of the device will not be reduced, the energy consumption of the device can be reduced, and the device can be improved. long-term reliability.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to a semiconductor device and a manufacturing method thereof. Background technique [0002] Nitride semiconductor materials, including GaN, have high saturation electron mobility, high breakdown voltage and wide band gap. Because of these characteristics, GaN-based high electron mobility transistor (High Electron Mobility Transistor, HEMT) devices attract Attention of researchers and semiconductor manufacturers. GaN HEMT devices have extremely broad application prospects in the fields of high-speed, high-efficiency, high-frequency communications and power electronics in the next 20 years. [0003] In GaN power electronic devices, there is a serious current collapse phenomenon. The performance is that under continuous high-voltage bias, the on-resistance increases, that is, the dynamic resistance increases, the power consumption of the device incre...

AI Technical Summary

Problems solved by technology

The performance is that under continuous high voltage bias, the on-resistance increases, that is, the dynamic resistance increases, the power consumption of the device increases, and the working efficiency of the device is reduced.

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