Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a semiconductor layer, a source electrode, a gate electrode, a drain electrode and at least two junction terminals. The semiconductor layer is arranged on one side of the substrate; the semiconductor layer comprises a channel layer and a barrier layer; and two-dimensional electron gas is formed at an interface between the channel layer and the barrier layer. The source electrode, the gate electrode and the drain electrode are arranged on one side, away from the substrate, of the semiconductor layer. The at least two drain junction terminals arranged at intervals are located on one side, far away from the substrate, of the semiconductor layer and located betweenthe gate electrode and the drain electrode; and the at least two drain junction terminals are in short circuit connection with the drain electrode. The concentration of the two-dimensional electron gas corresponding to an interval region between the drain junction terminals is not reduced, so that the on resistance of the semiconductor device is not increased, the working efficiency of the deviceis not reduced, the energy loss of the device can be reduced, and the long-term reliability of the device is improved.

Description

Technical field [0001] The embodiments of the present invention relate to the field of semiconductor technology, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Nitride semiconductor materials, including GaN, have high saturated electron mobility, high breakdown voltage and wide band gap. Because of these characteristics, GaN-based High Electron Mobility Transistor (HEMT) devices attract The attention of researchers and semiconductor manufacturers. GaN HEMT devices have extremely broad application prospects in high-speed, high-efficiency, high-frequency communications and power electronics in the next 20 years. [0003] In GaN power electronic devices, there is a serious current collapse phenomenon. The performance is that under continuous high-voltage bias, the on-resistance increases, that is, the dynamic resistance increases, and the power consumption of the device increases, which reduces the working efficiency of ...

AI Technical Summary

Problems solved by technology

The performance is that under continuous high voltage bias, the on-resistance increases, that is, the dynamic resistance increases, the power consumption of the device increases, and the working efficiency of the device is reduced.

Images