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Device for enhancing electroluminescence of silicon-based erbium-doped ZnO thin film, and preparation method

An electroluminescence and thin film technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of low electroluminescence intensity, and achieve the effect of simple, convenient and easy operation, process compatibility, and enhanced electroluminescence intensity.

Active Publication Date: 2019-11-12
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, overall, the electroluminescence intensity of Er is still low. Therefore, it is urgent to enhance the electroluminescence of Er-doped ZnO.

Method used

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  • Device for enhancing electroluminescence of silicon-based erbium-doped ZnO thin film, and preparation method
  • Device for enhancing electroluminescence of silicon-based erbium-doped ZnO thin film, and preparation method
  • Device for enhancing electroluminescence of silicon-based erbium-doped ZnO thin film, and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) The size is 15×15mm 2 the n + Type silicon wafer (silicon wafer heavily doped with phosphorus (resistivity 0.003-0.004Ω·cm, thickness ~625μm)), after cleaning, thermal oxidation at 1100°C for 5 minutes in a dry oxygen atmosphere to form SiO with a thickness of about 10nm x layer;

[0043] (2) Use the above-mentioned silicon wafer with an oxide layer as a substrate, place the substrate in a radio frequency magnetron sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 2×10 -3 After Pa is below, pass high-purity O 2 gas and high-purity Ar gas (flow ratio O 2 : Ar=1:2) to the pressure of 4Pa, use the mole percentage of 5% ZrO 2 and 0.75% Er 2 o 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 500°C, and the deposition time was 40min;

[0044] (3) Place the deposited film in O 2 In gas atmosphere, heat treatm...

Embodiment 2

[0068] (1) The size is 15×15mm 2 the n + Type silicon wafer (silicon wafer heavily doped with phosphorus (resistivity 0.003-0.004Ω·cm, thickness ~625μm)), after cleaning, thermal oxidation at 1100°C for 5 minutes in a dry oxygen atmosphere to form SiO with a thickness of about 10nm x layer;

[0069] (2) Use the above-mentioned silicon wafer with an oxide layer as a substrate, place the substrate in a radio frequency magnetron sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 2×10 -3 After Pa is below, pass high-purity O 2 gas and high-purity Ar gas (flow ratio O 2 : Ar=1:2) to the pressure of 4Pa, using 2.5% ZrO mixed with mole percentage 2 and 0.75% Er 2 o 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 500°C, and the deposition time was 40min;

[0070] (3) Place the deposited film in O 2In gas atmosphere, heat...

Embodiment 3

[0075] (1) The size is 15×15mm 2 the n + Type silicon wafer (silicon wafer heavily doped with phosphorus (resistivity 0.003-0.004Ω·cm, thickness ~625μm)), after cleaning, thermal oxidation at 1100°C for 5 minutes in a dry oxygen atmosphere to form SiO with a thickness of about 10nm x layer;

[0076] (2) Use the above-mentioned silicon wafer with an oxide layer as a substrate, place the substrate in a radio frequency magnetron sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 2×10 -3 After Pa is below, pass high-purity O 2 gas and high-purity Ar gas (flow ratio O 2 :Ar=1:2) to the pressure of 4Pa, use the mole percentage of 7.5% ZrO 2 and 0.75% Er 2 o 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 500°C, and the deposition time was 40min;

[0077] (3) Place the deposited film in O 2 In gas atmosphere, heat treat...

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Abstract

The invention discloses a device for enhancing electroluminescence of a silicon-based erbium-doped ZnO thin film, and a preparation method, and belongs to the technical field of silicon-based photoelectrons. The device comprises a silicon substrate; a light-emitting layer and a transparent electrode layer are sequentially arranged on the front surface of the silicon substrate; an ohmic contact electrode is arranged on the back surface of the silicon substrate; a silicon oxide layer is arranged on the surface of the silicon substrate; and the light-emitting layer is a zirconium and erbium-codoped ZnO film. The zirconium and erbium-codoped ZnO film is deposited on the surface of an n+ type silicon wafer with an SiOx layer with the thickness of 10nm, so that the prepared electroluminescent device has and only has characteristic luminescence peaks of Er<3+> ions in visible and infrared regions; compared with an electroluminescent device which is not doped with Zr and is only doped with Er,the electroluminescent intensity of the Zr and Er-codoped device is enhanced by more than 5 times, and the enhancement mode is simple and convenient and is easy to operate; and the method for preparing the device is compatible with an existing silicon-based CMOS process.

Description

technical field [0001] The invention relates to the technical field of silicon-based optoelectronics, in particular to a device and a preparation method for enhancing the electroluminescence of a silicon-based erbium-doped ZnO thin film. Background technique [0002] As we all know, with the continuous improvement of CMOS process integration, the number of transistors per unit wafer area in integrated circuits continues to increase, and the characteristic line width of transistors continues to decrease. The improvement of device performance also brings many problems, such as the overall power consumption of the device Larger, the mutual interference between discrete devices becomes more serious, and the heating of devices becomes more and more serious. These problems have become bottlenecks that limit the further development of electrical interconnection technology. In the foreseeable future, electrical interconnection technology will not be able to meet the increasing deman...

Claims

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Application Information

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IPC IPC(8): H01L33/28H01L33/42H01L33/00
CPCH01L33/285H01L33/0087H01L33/42
Inventor 马向阳陈金鑫杨德仁
Owner ZHEJIANG UNIV