Slurry and polishing method

A suspension and ground technology, which is applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes, can solve problems such as grinding damage, and achieve the effect of low grinding damage and sufficient grinding speed

Active Publication Date: 2019-11-15
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in recent years, in the manufacturing process of semiconductor elements, further miniaturization of wiring is sought, and polishing damage generated during polishing has become a problem
That is, when using conventional cerium oxide-based polishing liquids for polishing, even if minute polishing damage occurs, there is no problem if the size of the polishing damage is smaller than the conventional wiring width. However, further miniaturization of the wiring is required. Even minor grinding damage can be a problem

Method used

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  • Slurry and polishing method
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0178] Mixed 600 g of the above-mentioned cerium oxide suspension, 600 g of the above-mentioned cerium hydroxide suspension, and 800 g of ion-exchanged water were mixed for 30 minutes while stirring at a rotation speed of 500 rpm using a two-bladed stirring blade to prepare a mixed solution 1 . Mix the mixed solution 1 of 300g and the ion-exchanged water of 600g, prepare the CMP grinding liquid (the cerium oxide with negative zeta potential Content of particles: 0.5% by mass, content of cerium hydroxide particles having a positive zeta potential: 0.1% by mass, pH: 4.0).

Embodiment 2

[0180] To the mixed liquid 1 of Example 1, 15 g of polyethylene glycol PEG600 (weight average molecular weight: 600) manufactured by Wako Pure Chemical Industries, Ltd. was added to prepare a mixed liquid 2A. Mix 300g of the mixed solution 2A and 600g of ion-exchanged water to prepare a CMP polishing solution (the content of cerium oxide particles with negative zeta potential: 0.5% by mass, the content of cerium hydroxide particles with positive zeta potential: 0.1% by mass, pH: 4.0).

Embodiment 3

[0182] To the mixed liquid 1 of Example 1, 15 g of polyethylene glycol PEG4000 (weight average molecular weight: 4000) manufactured by Wako Pure Chemical Industries, Ltd. was added to prepare a mixed liquid 2B. Mix 300g of mixed solution 2B and 600g of ion-exchanged water to prepare CMP grinding liquid (the content of cerium oxide particles with negative zeta potential: 0.5% by mass, the content of cerium hydroxide particles with positive zeta potential: 0.1% by mass, pH: 4.0).

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Abstract

Provided is a slurry that comprises abrasive grains and a liquid medium, wherein: the abrasive grains include a first particle and a second particle that is in contact with the first particle; and thefirst particle contains ceria and has a negative zeta potential, while the second particle contains a hydroxide of a tetravalent metal element and has a positive zeta potential.

Description

technical field [0001] The present invention relates to slurry and milling methods. In particular, the present invention relates to a suspension and a polishing method used in a substrate surface planarization process as a semiconductor element manufacturing technology. In more detail, the present invention relates to suspensions and grinding methods used in planarization processes of shallow trench isolation (Shallow Trench Isolation (hereinafter referred to as "STI") insulating materials, pre-metal insulating materials, interlayer insulating materials, and the like. Background technique [0002] In recent years, in the manufacturing process of semiconductor elements, the importance of processing technology for achieving higher density and miniaturization has been increasing. As one of the processing technologies, CMP (Chemical Mechanical Polishing: Chemical Mechanical Polishing) technology is used for the formation of STI, planarization of pre-metal insulating material or...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C09K3/14
CPCH01L21/31053C01F17/235C01P2004/64C01P2006/22C09G1/02C09K3/1463H01L21/304C09K3/1454H01L21/3212
Inventor 岩野友洋
Owner RESONAC CORPORATION
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