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Mtj device process/integration method with pre-patterned seed layer

A technology for bonding components and seed layers, applied in the fields of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, components of electromagnetic equipment, etc., capable of solving problems such as damage

Inactive Publication Date: 2019-11-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thin magnetic layers used in magnetic tunnel junction stacks are easily damaged by plasma etch processes

Method used

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  • Mtj device process/integration method with pre-patterned seed layer
  • Mtj device process/integration method with pre-patterned seed layer
  • Mtj device process/integration method with pre-patterned seed layer

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Embodiment Construction

[0016] A novel integration scheme is described to avoid damage to the magnetic tunnel junction layer due to prolonged exposure to plasma processing. FIG. 1 is a flowchart illustrating a standard method of forming a magnetic tunnel junction (MTJ) element, the elements of which are shown schematically in cross-section in FIGS. 2 and 3 .

[0017] As shown in FIG. 1 , in a first step 101 , a CMOS substrate containing via holes is fabricated to connect with a subsequently formed magnetic tunnel junction element. Substrate 10 is shown in FIG. 2 . Next, in step 102, the bottom electrode is patterned. Figure 2 shows the bottom electrode 12, with a dielectric layer 14 subsequently deposited and planarized. Next, in step 103 , a magnetic tunnel junction film layer is deposited, including the seed layer 16 , the pinning layer 18 , the barrier layer 20 , the free layer 22 , and the capping layer 24 , as shown in FIG. 2 . These layers constitute a stack 30 of magnetic tunnel junction fi...

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Abstract

A method for etching a magnetic tunneling junction (MTJ) structure is described. A bottom electrode layer (12) is provided on a substrate (10). A seed layer (16) is deposited on the bottom electrode layer. The seed layer and bottom electrode layer are patterned. A dielectric layer is deposited over the patterned seed layer and bottom electrode layer and planarized wherein the seed layer is exposed. Thereafter, a stack (30) of MTJ layers is deposited on the patterned seed layer comprising a pinned layer (18), a tunnel barrier layer (20), and a free layer (22). The MTJ stack is then patterned toform a MTJ device. Because the seed layer was patterned before the MTJ patterning step, the exposure of the device to etching plasma gases is shortened and thus, etch damage is minimized.

Description

technical field [0001] The present disclosure relates to the general field of magnetic tunneling junctions (MTJs), and more particularly to etching methods for forming magnetic tunneling junction structures. Background technique [0002] Fabrication of MR devices typically involves a series of process steps during which many layers of metal and dielectric layers are deposited and then patterned to form diamagnetic stacks and electrodes for electrical connection. A diamagnetic stack typically includes free and pinned layers of elements, which are sandwiched by one or more dielectric layers, and function as a tunneling junction for a Magnetic Tunneling Junction (MTJ) element. [0003] A key challenge in magnetic random access memory (MRAM) technology is to pattern the magnetic tunnel junction (MTJ) stack without damaging the components. The thin magnetic layers used in magnetic tunnel junction stacks are easily damaged during the plasma etch process. Therefore, it is desirab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10H10N50/80
CPCH10N50/01H10N50/80H10N50/10
Inventor 杰斯明·哈克锺汤姆滕忠健沈冬娜
Owner TAIWAN SEMICON MFG CO LTD