Film bulk acoustic resonator, filter and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in impedance networks, electrical components, etc., can solve problems such as device frequency drift, affect device performance, and device temperature rise, so as to avoid temperature rise, reduce process difficulty, and improve performance. Effect

Active Publication Date: 2019-11-26
HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Devices with this structure have certain limitations in power capacity. When the input power increases, the temperature of the device will rise due to the limited heat dissipation of the device, which will cause device frequency drift and nonlinearity, which will greatly affect the performance of the device.

Method used

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  • Film bulk acoustic resonator, filter and preparation method thereof
  • Film bulk acoustic resonator, filter and preparation method thereof
  • Film bulk acoustic resonator, filter and preparation method thereof

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Embodiment Construction

[0040] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0041] Such as Figure 1 to Figure 18 Shown is the first embodiment, a thin film bulk acoustic resonator and its preparation method, such as figure 1 As shown, the process flow of the thin film bulk acoustic resonator preparation method includes the following steps:

[0042] S110, selecting the first substrate 100, and patterning the first surface of the first substrate 100, forming a groove area 101 on the first surface;

[0043] S120, select the second substrate 300, deposit an etching stop layer 400 on the second substrate 300, and sequentially form a piezoelectric sandwich structure of the first electrode 600, the piezoelectric layer 700, and the second electrode 800 on the etching stop layer 400;

[0044] S130, ali...

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Abstract

The invention provides a film bulk acoustic resonator, a filter and a preparation method of the film bulk acoustic resonator, belongs to the technical field of electronic manufacturing, and can at least partially solve the problems that an existing resonant filter has certain limitation in power bearing capacity, when the input power is increased, heat dissipation of a device is limited, the temperature of the device rises, the frequency of the device drifts, nonlinearity is generated, and the performance of the device is affected. According to the invention, SiC is used as a substrate material; the electrodes of the resonator are connected with the SiC substrate, and heat caused by high input power is dissipated in time by utilizing high thermal conductivity of the SiC substrate, so thattemperature rise of the device is avoided, the problems of frequency drift and nonlinearity of the device caused by temperature rise of the device are further avoided, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of electronic manufacturing, and in particular relates to a film bulk acoustic wave resonator, a filter and a preparation method thereof. Background technique [0002] With the development of wireless communication applications, people have higher and higher requirements for data transmission speed. In the field of mobile communication, the first generation is analog technology, the second generation realizes digital voice communication, the third generation (3G) is characterized by multimedia communication, and the fourth generation (4G) increases the communication rate to 1Gbps and reduces the delay By 10ms, the fifth generation (5G) is a new generation of mobile communication technology after 4G. Compared with 3G and 4G, the network transmission rate and network capacity of 5G will be greatly improved. If the main solution from 1G to 4G is the communication between people, 5G will solve the communication...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17H03H9/54
CPCH03H3/02H03H9/02015H03H9/02047H03H9/02149H03H9/02102H03H9/174H03H9/54H03H2003/023
Inventor 张树民王国浩汪泉陈海龙郑根林其他发明人请求不公开姓名
Owner HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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