Fabrication of nanostructured wo on the surface of ito glass 3 thin film method

A nanostructure and glass surface technology, applied in the direction of coating, etc., can solve the problems of low efficiency and high energy consumption, and achieve the effects of avoiding energy consumption, large specific surface area, and saving time

Active Publication Date: 2022-01-11
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a low energy consumption and high efficiency preparation of nanostructured WO on the surface of ITO glass. 3 The thin-film method overcomes the shortcomings of high energy consumption and low efficiency of the traditional method of spin-coating thermal decomposition to prepare the seed layer to re-grow nanowires, and promotes WO 3 Practical Applications of Thin Films

Method used

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  • Fabrication of nanostructured wo on the surface of ito glass <sub>3</sub> thin film method
  • Fabrication of nanostructured wo on the surface of ito glass <sub>3</sub> thin film method
  • Fabrication of nanostructured wo on the surface of ito glass <sub>3</sub> thin film method

Examples

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Embodiment 1

[0040] Example 1: Preparation of seed layer by constant current electrodeposition and then solvothermal growth of nanostructured WO 3 film

[0041] A preparation of nanostructured WO on the surface of ITO glass 3 Low-energy, high-efficiency methods for thin films, such as figure 1 shown, including the following steps:

[0042] The sample to be processed in this embodiment is a circular ITO glass with a diameter of 37mm and a square resistance of 10Ω.

[0043] A. Preparation of WO on ITO glass by electrodeposition 3 seed layer;

[0044] Prepare 0.1mol / L Na in the electroplating pool 2 WO 4 500mL of aqueous solution, the cleaned sample was used as cathode insertion solution with an area of ​​54cm 2 The Pt electrode used as the anode is inserted into the solution, the distance between the two electrodes is 2.5cm, the constant current, the current density is 1.25mA / cm 2 , after electrodeposition at room temperature for 200s, it was taken out to obtain a dark brown sample. ...

Embodiment 2

[0049] Example 2: Preparation of seed layer by pulse electrodeposition and then solvothermal growth of nanostructured WO 3 film

[0050] A preparation of nanostructured WO on the surface of ITO glass 3 Low-energy, high-efficiency methods for thin films, such as figure 1 shown, including the following steps:

[0051] The sample to be processed in this embodiment is a circular ITO glass with a diameter of 37mm and a square resistance of 10Ω.

[0052] A. Preparation of WO on ITO glass by electrodeposition 3 seed layer;

[0053] Prepare 0.1mol / L Na 2 WO 4 500mL of aqueous solution, adding H at a concentration of 0.1mol / L 2 SO 4 Make the pH of the electroplating solution = 7, and use the cleaned sample as the cathode insertion solution, with an area of ​​54 cm 2 The Pt electrode used as the anode is inserted into the solution, the distance between the two electrodes is 2.5cm, using unidirectional pulse electrodeposition, the frequency is 100Hz, the on-off ratio is 1:1, and...

Embodiment 3

[0059] A preparation of nanostructured WO on the surface of ITO glass 3 Low-energy, high-efficiency methods for thin films, such as figure 1 shown, including the following steps:

[0060] The sample to be processed in this embodiment is a circular ITO glass with a diameter of 37mm and a square resistance of 10Ω.

[0061] A. Preparation of WO on ITO glass by electrodeposition 3 seed layer;

[0062] Prepare 0.01mol / L K in the electroplating pool 2 WO 4 500mL of aqueous solution, the cleaned sample was used as the cathode insertion solution, with an area of ​​53.76cm 2 The graphite electrode used as the anode is inserted into the solution, the distance between the two electrodes is 2.5cm, the constant current, the current density is 0.1mA / cm 2 , taken out after electrodeposition at room temperature for 600s, and the sample was obtained.

[0063] B. Pickling: prepare 500mL of 0.001mol / L hydrochloric acid in the pickling tank, clamp the sample with wooden clamps and rinse it...

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Abstract

The invention provides a method for preparing nanostructured WO on the surface of ITO glass. 3 The method of thin film relates to the technical field of thin film material preparation; including the preparation of WO on ITO glass by sequential electrodeposition and pickling 3 Growth of Nanostructured WO by Seed Layer and Solvothermal Method 3 The step of thin film; when preparing the seed layer, the electroplating solution used for electrodeposition includes tungstate and inorganic acid, and the solution used for pickling is inorganic acid; the present invention prepares WO by electrodeposition and pickling on ITO glass successively. 3 seed layer, and grow nanostructured WO by solvothermal method 3 thin film, the electrodeposited seed layer ensures both WO 3 The high bonding strength of the thin film and ITO overcomes the problem of high energy consumption and low efficiency of the traditional preparation of the precursor solution followed by spin-coating thermal decomposition to prepare the seed layer. 3 The application of thin films in the fields of dimming glass, hydrogen sensors and electrochromism provides technical support and has broad application prospects.

Description

technical field [0001] The invention relates to the technical field of film material preparation, in particular to the preparation of nanostructured WO on the surface of ITO glass. 3 The method of thin film, particularly relates to a kind of ITO glass surface uses the method for electrodepositing and pickling to prepare seed layer successively, and then grows nanostructure WO by solvothermal method 3 A low-energy, high-efficiency method for thin films. Background technique [0002] WO 3 It is a kind of semiconductor, which has special electrochromic and hydrogen-induced chromic properties, and has broad application prospects in dimming glass and hydrogen sensors. This is also the current WO 3 main research directions. Numerous studies have shown that WO with nanostructure 3 The electrochromic and hydrogenochromic properties of thin films are far superior to those of bulk WO 3 , mainly because the nanostructured WO 3 It has a large specific surface area, which increases...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/231C03C2217/219C03C2218/115
Inventor 郭兴伍高晨璟聂乐文彭立明
Owner SHANGHAI JIAOTONG UNIV
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