Monocrystalline silicon growth furnace with high safety performance

A technology of safety performance and growth furnace, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as major safety hazards, achieve the effects of increasing service life, convenient cleaning, and improving work efficiency

Inactive Publication Date: 2019-12-03
萧县威辰机电工程设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem in the prior art that there is still a large potential safety hazard when the single crystal silicon is finished and the single crystal rod is taken out, and a single crystal silicon growth furnace with high safety performance is proposed

Method used

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  • Monocrystalline silicon growth furnace with high safety performance
  • Monocrystalline silicon growth furnace with high safety performance
  • Monocrystalline silicon growth furnace with high safety performance

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Experimental program
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Effect test

Embodiment 1

[0029] like Figure 1-4 As shown, a single crystal silicon growth furnace with high safety performance includes a growth furnace as a whole 1, and the growth furnace as a whole 1 includes a lifting and rotating system 2, an upper furnace cover 3 and a lower furnace body 4, and the pulling and rotating system 2 is located in the upper furnace The upper end of the cover 3, the upper furnace cover 3 is provided with a lifting rope 5, the upper end of the lifting rope 5 is connected with the lower end of the lifting rotation system 2, the lower end of the lifting rope 5 is connected with a single crystal rod 10, and the lower furnace body 4 includes a graphite heater 8 and a quartz crucible 9, the single crystal rod 10 is located in the quartz crucible 9, the outer surface of the quartz crucible 9 is provided with a graphite heater 8, the graphite heater 8 is provided with a heat preservation cover 7, and the lower furnace body 4 The lower end is provided with an air inlet 13 .

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Embodiment 2

[0037] like figure 1 , Figure 5 , Image 6 As shown, a single crystal silicon growth furnace with high safety performance includes a growth furnace as a whole 1, and the growth furnace as a whole 1 includes a lifting and rotating system 2, an upper furnace cover 3 and a lower furnace body 4, and the pulling and rotating system 2 is located in the upper furnace The upper end of the cover 3, the upper furnace cover 3 is provided with a lifting rope 5, the upper end of the lifting rope 5 is connected with the lower end of the lifting rotation system 2, the lower end of the lifting rope 5 is connected with a single crystal rod 10, and the lower furnace body 4 includes a graphite heater 8 and a quartz crucible 9, the single crystal rod 10 is located in the quartz crucible 9, the outer surface of the quartz crucible 9 is provided with a graphite heater 8, the graphite heater 8 is provided with a heat preservation cover 7, and the lower furnace body 4 An air inlet 13 is provided a...

Embodiment 3

[0043] like figure 1 , Figure 7 As shown, a single crystal silicon growth furnace with high safety performance includes a growth furnace as a whole 1, and the growth furnace as a whole 1 includes a lifting and rotating system 2, an upper furnace cover 3 and a lower furnace body 4, and the pulling and rotating system 2 is located in the upper furnace The upper end of the cover 3, the upper furnace cover 3 is provided with a lifting rope 5, the upper end of the lifting rope 5 is connected with the lower end of the lifting rotation system 2, the lower end of the lifting rope 5 is connected with a single crystal rod 10, and the lower furnace body 4 includes a graphite heater 8 and a quartz crucible 9, the single crystal rod 10 is located in the quartz crucible 9, the outer surface of the quartz crucible 9 is provided with a graphite heater 8, the graphite heater 8 is provided with a heat preservation cover 7, and the lower furnace body 4 An air inlet 13 is provided at the lower ...

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Abstract

The invention discloses a monocrystalline silicon growth furnace with high safety performance. The monocrystalline silicon growth furnace comprises a growth furnace body, wherein the growth furnace body comprises a lifting rotating system, an upper furnace cover and a lower furnace body, the lifting rotating system is located at the upper end of the upper furnace cover, a lifting rope is arrangedin the upper furnace cover, the upper end of the lifting rope is connected with the lower end of the lifting rotating system, the lower end of the lifting rope is connected with a monocrystalline rod,the lower furnace body comprises a graphite heater and a quartz crucible, the monocrystalline rod is located in the quartz crucible, the graphite heater is arranged on the outer surface of the quartzcrucible, a thermal insulation cover is arranged on the graphite heater, and a gas inlet is formed in the lower end of the lower furnace body. Through a rotating table and a manipulator, the monocrystalline rod can be automatically mounted when discharged out of the furnace, and danger caused by high temperature of the monocrystalline rod is reduced; and through the lifting structure, labor can be saved, the working efficiency can be improved, and motor consumption can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a single crystal silicon growth furnace with high safety performance. Background technique [0002] Single crystal silicon growth furnace is a manufacturing equipment for producing single crystal silicon by Czochralski method. It is mainly composed of three parts: the main engine, the heating power supply and the computer control system. The principle of the Czochralski method is firstly to put the high-purity polysilicon raw material into the high-purity quartz crucible and melt it through the high temperature generated by the graphite heater; The temperature of the silicon liquid is slightly lowered to produce a certain degree of supercooling, and then a silicon single crystal (called a seed crystal) fixed on the seed crystal axis is inserted into the surface of the melt, and after the seed crystal and the melt are melted, Slowly pull up the seed crystal, and the crystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/30C30B29/06
CPCC30B15/00C30B15/30C30B29/06
Inventor 王翠莲
Owner 萧县威辰机电工程设备有限公司
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