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Slurry composition for chemical mechanical polishing

A chemical machinery and composition technology, applied in polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve the problems of different grinding rates, and achieve the effects of increasing the grinding rate and easy adjustment of the selection ratio.

Active Publication Date: 2019-12-03
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] When using the above slurry composition to polish an insulating film, a metal film, or a multilayer film including an insulating film and a metal film, there is a problem that the polishing rate is different for each polishing object

Method used

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  • Slurry composition for chemical mechanical polishing
  • Slurry composition for chemical mechanical polishing
  • Slurry composition for chemical mechanical polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0112] About embodiment and comparative example, the grinding condition of the metal film of semiconductor substrate and the measuring method of grinding speed are as follows:

[0113] 1. Experimental wafer: tungsten (W) 8-inch blanket, silicon oxide film (PE-TEOS) 8-inch blanket, silicon nitride film (Si 3 N 4 )8 inch blanket

[0114] 2. Grinding equipment (Polisher): Mirra 3400 (Applied Materials)

[0115] 3. Grinding conditions: according to the method in Table 1

[0116] 【Table 1】

[0117]

[0118] 4. Grinding pad (Pad): IC-1000 (Rohm&Haas company)

[0119] 5. Thickness (grinding speed) measuring instrument (thickness unit: symbol: )

[0120] Tungsten film: CMT-2000 (4-point probe, Chang Min Tech.)

[0121] Silicon oxide film and silicon nitride film: Thermawave OP-2600 (KLA TENCOR)

[0122] [Formula 1]

[0123] Grinding speed = thickness before CMP – thickness after CMP

[0124] 6. Particle size (particle size) analysis instrument

[0125] ELS-Z (Otsuka E...

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Abstract

The present invention relates to a slurry composition for chemical mechanical polishing. More particularly, the present invention relates to a slurry composition for chemical mechanical polishing which uses a compound having phosphate groups as a polishing selectivity regulator and optionally further uses a tertiary amine compound along with the polishing selectivity regulator, such that it is possible to polish, either alone or in combination, an insulating film such as a silicon nitride film or a metal film such as tungsten in contrast to the prior art, and particularly, to easily control the polishing rate thereof, thereby minimizing an interlayer step of a semiconductor element; and a method for polishing a semiconductor substrate using the same.

Description

[0001] This application claims the priority of Korean patent applications filed with the Korean Patent Office on April 27, 2017 and February 21, 2018, with application numbers 10-2017-0054609 and 10-2018-0020654 respectively, the entire contents of which are cited incorporated into this application. technical field [0002] The invention relates to a slurry composition for chemical mechanical polishing. In more detail, the present invention relates to a slurry composition for chemical mechanical polishing and a polishing method using the same. The slurry composition contains a phosphate compound as a selectivity regulator, which can adjust the selectivity of the polishing object. Background technique [0003] As semiconductor elements become more integrated, denser, and multilayer structured, finer patterning techniques are used, so the surface structure of semiconductor elements becomes more complicated, and the step difference between interlayer films becomes larger. [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/306H01L21/321
CPCH01L21/31053C09G1/02C09K3/1454C09K3/1463H01L21/30625H01L21/3212
Inventor 朴惠贞李敏键朴昌墉朴民成陈成勋李玖和朴钟大金宰贤
Owner DONGJIN SEMICHEM CO LTD
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