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Fuse unit, fuse bit unit structure and manufacturing method thereof

A technology of fuse unit and unit structure, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc. It can solve the problems of limited application, high programming current requirements, explosion, etc., and achieve improved reliability, convergence of resistance distribution, The effect of increased resistance

Active Publication Date: 2022-08-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the promotion of high κ dielectric metal gate (HKMG) technology, the gate material is changed from polysilicon polymer to metal, and the traditional polysilicon electric fuse is no longer compatible with advanced process technology. It is necessary to design a fuse that can replace the component material
[0005] At present, for the process of 28nm HKMG technology and above nodes, metal fuses with a thermal rupture mode are mainly used. However, problems such as explosions caused by thermal rupture, high programming current requirements, and reliability are all limited. application in advanced process technology

Method used

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  • Fuse unit, fuse bit unit structure and manufacturing method thereof
  • Fuse unit, fuse bit unit structure and manufacturing method thereof
  • Fuse unit, fuse bit unit structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0061] A first embodiment of the present invention provides a metal electric fuse unit with an electromigration mechanism.

[0062] The fuse unit provided in this embodiment includes a fuse connection area 3 and an anode 1 and a cathode 2 that are electrically connected to the fuse connection area 3 . The fuse connection area helps to generate electromigration when programming current is applied between the anode 1 and the cathode 2, so that the metal fuse unit forms an open circuit, and the connection between the fuse connection area 3 and the cathode 2 adopts a separate first conductive plug Plug 4.

[0063] The fuse cell includes programming circuitry, which may be coupled (eg, electrically coupled) to anode 1 and / or cathode 2 . The programming circuit may include or may be a programming transistor. Current can flow through the fuse unit. Current can flow from the cathode 2 to the anode 1 via the fuse connection region 3, ie the direction of current flow.

[0064] The c...

Embodiment approach 2

[0081] A second embodiment of the present invention provides a metal fuse bit cell structure including the above metal fuse cell.

[0082] The metal fuse bit cell structure includes a set of programmable transistors, an "L"-shaped fuse connection area 3 on the dielectric layer, an anode 1 and a cathode 2 electrically connected to the fuse connection area 3, the cathode 2 is provided with a single first conductive plug 4 . The fuse connection area 3 , the anode 1 , and the cathode 2 are formed of metal materials through a back-end process.

[0083] The set of programmable transistors includes a plurality of transistors connected in parallel that can generate a programming current large enough to cause electron migration in the fuse link region.

[0084] as attached Figure 1-5 As shown, the fuse connection area 3 is an “L”-shaped structure, one end of the “L”-shaped fuse connection area is connected with the anode 1 , and the other end is connected through a single first cond...

Embodiment approach 3

[0100] The third embodiment of the present invention provides a method for forming the above-mentioned metal fuse bit cell structure, and the specific process is as follows:

[0101] First refer to Image 6 , forming as Image 6 The structure shown needs to go through the following steps: providing a substrate; obtaining a device region and a fuse region 9 through shallow trench isolation, and forming a logic device 10 on the substrate of the device region; combining the logic device 10 on the semiconductor substrate, Multiple groups of programmable transistors are formed on the substrate; the interlayer dielectric is filled, then the contact holes are etched and metal contacts 11 are deposited.

[0102] In this embodiment, the substrate is a silicon substrate. In other implementation manners, the material of the substrate can also be germanium, silicon germanium, silicon carbide, gallium arsenide or indium gallium, and the substrate can also be a silicon-on-insulator substr...

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Abstract

The present invention relates to a fuse unit, a fuse bit unit structure, and a manufacturing method of the fuse bit unit structure. The fuse unit includes a fuse connection area, an anode and a cathode electrically connected to the fuse connection area, and the fuse connection area is "L" shaped. Since the "L"-shaped fuse connection area of ​​the present invention has a special structural design, it can control the electromigration position and improve the reliability of the fuse.

Description

technical field [0001] The present invention relates to an integrated circuit structure, in particular to a metal fuse structure and a manufacturing method thereof. Background technique [0002] In the semiconductor industry, fuse elements are widely used in integrated circuits, such as electronic chip ID (ECID), memory redundancy, encryption, circuit element replacement, and the like. By selectively blowing fuses located within an integrated circuit, general-purpose integrated circuits can be configured and used for a variety of purposes. [0003] Traditionally, fuses are designed in integrated circuits. A current of sufficient magnitude causes electro-migration or melting, and the fuses can be selectively blown, thus resulting in a high resistance path or open circuit. . The fuse can be degraded by applying a current less than a complete blow to the fuse, which is equivalent to adding a resistance through the fuse. This process of selectively blowing or degrading the fus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112H01L21/02
CPCH01L21/02625H10B20/20
Inventor 杨承
Owner SEMICON MFG INT (SHANGHAI) CORP