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SiC MOSFET device of high-reliability epitaxial gate and manufacturing method thereof

A reliable and epitaxial technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low work efficiency and waste of manpower

Active Publication Date: 2019-12-10
深圳爱仕特科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a SiC MOSFET device with a high reliability epitaxial gate and its preparation method, so as to solve the problem of low work efficiency and waste of a lot of manpower in the prior art mentioned in the background art

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  • SiC MOSFET device of high-reliability epitaxial gate and manufacturing method thereof
  • SiC MOSFET device of high-reliability epitaxial gate and manufacturing method thereof
  • SiC MOSFET device of high-reliability epitaxial gate and manufacturing method thereof

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The specific embodiments described here are only used to explain the present invention, not to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] The invention provides a method for preparing a SiC MOSFET device with a high-reliability epitaxial gate, comprising the following steps:

[0044] S1, such as figure 1 As shown, the SiC substrate 101 and the SiC epitaxial layer 102 are selected, and the SiC substrate 101 and the SiC epitaxial layer 102 are cleaned and dried;

[...

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Abstract

The invention discloses a SiC MOSFET device with a high-reliability epitaxial gate, and also provides a manufacturing method of the SiC MOSFET device with the high-reliability epitaxial gate. Due to afact that an insulating dielectric gate is obtained through intrinsic SiC of epitaxial high resistivity, a matching degree with substrate epitaxial SiC lattice constant is high, interface state density between a SiCMOSFET device dielectric layer and silicon carbide can be reduced, scattering of carrier transport is decreased, and carrier mobility is improved. A dielectric constant of SiC is higher than that of SiO2, a situation that an electric field is excessively concentrated on a gate dielectric layer can be relieved, and simultaneously, a critical electric field of SiC is far higher thanthat of SiO2, and a breakdown resistance capability and stability of the SiC MOSFET device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and specifically relates to a SiC MOSFET device with a high-reliability epitaxial gate. At the same time, the invention also relates to a preparation method for a SiC MOSFET device with a high-reliability epitaxial gate. Background technique [0002] Silicon carbide (SiC) is a wide bandgap semiconductor with excellent performance. It not only has the characteristics of wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift rate, but also has excellent physical and chemical stability. , strong radiation resistance and mechanical strength. Therefore, SiC can be used to develop high-temperature, high-power, high-frequency power devices. At present, the insulating dielectric gate of SiC-based MOS power devices is mainly SiO obtained by thermal oxidation. 2 , SiO formed by thermal oxidation of SiC substrate 2 The dielectric constant of the ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/417H01L21/336H01L29/78
CPCH01L29/41766H01L29/0615H01L29/78H01L29/66409
Inventor 姚金才陈宇朱超群
Owner 深圳爱仕特科技有限公司
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