30results about How to "Relief Concentration" patented technology

A light-emitting diode element comprising: an n-type conductive layer (2) which comprises a first region (2a), a second region (2b) and a back surface (2c); an active layer (3) and a p-type conductive layer (4) both of which are arranged on the first region (2a) of the n-type conductive layer (2); a p-type electrode (5) which is arranged on the main surface of the p-type conductive layer (4); an insulating film (15) which is arranged on the inner wall of a through-hole (8) that penetrates through the n-type conductive layer (2) and has an opening on the second region (2b) and the back surface (2c) of the n-type conductive layer (2); a conductive part (9) which is arranged on the surface of the insulating film (15) in the inside of the through-hole (8); an n-type surface electrode (6) which is arranged in the second region (2b) and is in contact with the conductive part (9); and an n-type back-side electrode (7) which is arranged on the back surface (2c) of the n-type conductive layer (2) and is in contact with the conductive part (9).

In an electric discharge device (40) performing streamer discharge from the top of a discharge electrode (41) toward an opposing electrode (42), the discharge electrode (41) with a liner or bar-like shape is placed substantially parallel to the opposing electrode (42). The structure results that the shape of the top of the discharge electrode (41) does not change even if the top wears and the distance between the discharge electrode (41) and the opposing electrode (42) also does not change. This prevents stability of streamer discharge from lowering even if the top of the discharge electrode (41) wears.

The invention provides an IGBT device and a manufacturing method thereof. The IGBT device includes: a substrate, the substrate includes opposite first main surfaces and second main surfaces, the first main surface is formed with a front structure of the IGBT device, and the IGBT device includes The active region, the transition region and the terminal region; the oxygen ion defect layer, formed in the second main surface of the transition region and the terminal region; the collector region, formed on the second main surface of the substrate; the hydrogen ion doped region, formed In the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as adsorbents for hydrogen ions so as to increase the doping of hydrogen ions in the hydrogen ion doped region. impurity concentration. The present invention reduces the emission efficiency of the transition region and the terminal region when the IGBT device is turned on, and at the same time increases the recombination speed of electrons and holes in the transition region and the terminal region when the IGBT device is turned off, thereby effectively alleviating the current concentration problem existing in the transition region , Improve the reliability of the IGBT chip.

The invention provides an anaerobic digestion treatment system and method of kitchen waste. The system comprises a first biological reactor in a start-up period, a second biological reactor in an active period, a third biological reactor in a decomposed period, a first digested effluent tank, a second digested effluent tank, a third digested effluent tank, a first pump, a second pump and a third pump, wherein a digested effluent outlet at the bottom of the first biological reactor is connected with a digested effluent inlet / outlet at the upper end of the first digested effluent tank; a digested effluent outlet at the bottom of the second biological reactor is connected with a digested effluent inlet / outlet at the upper end of the second digested effluent tank; digested effluent in the second digested effluent tank is conveyed to the second biological reactor through the second pump; a digested effluent outlet at the bottom of the third biological reactor is connected with a digested effluent inlet / outlet at the upper end of the third digested effluent tank; and digested effluent in the third digested effluent tank flows back to the first biological reactor through the third pump. By implementing the system and method, the technical problems of long cycle, low gas production rate, high salt content and inhibition of VFA (Volatile Fatty Acid) accumulation and ammonia nitrogen accumulation on gas production rate in the conventional kitchen waste anaerobic digestion process can be solved.

The invention provides a Cu@Sn core-shell structure high-temperature solder and its preparation method. The core-shell structure metal powder has only two elements, Sn and Cu, and has a core-shell structure of Sn-coated Cu particles. The particle size is Between 1 μm and 20 μm. The metal powder is mixed with commercially available flux to obtain solder, which can be used for welding various substrates. During the reflow process, the Sn in the outer layer of the particles can react with the Cu in the inner core to form Cu6Sn5, thereby forming a dispersed distribution in the intermetallic compound. The weld structure of copper particles can be formed above the melting point of Sn, and can serve below the melting point of Cu6Sn5 after formation, so as to achieve the purpose of low temperature connection and high temperature service. The invention has the advantages of simple process, low cost and strong practicability, and solves the problems of high pasting cost, high process temperature and long process time of power device chips at present.

A manufacturing method for an SiC-based MOS device gate dielectric thin film comprises the steps that an SiC substrate is cleaned; an AlN thin film is deposited on the cleaned SiC substrate; the AlN thin film is oxidized into an AlxOyNz thin film, through oxidization technology control, the AlN thin film is oxidized into the AlxOyNz thin film completely or partially, and an AlN / AlxOyNz gate dielectric layer is formed; an Al2O3 thin film is deposited onto the AlxOyNz thin film to form an AlxOyNz / Al2O3 stacked gate dielectric layer and an AlN / AlxOyNz / Al2O3 stacked gate dielectric layer; argon annealing is conducted on the three obtained stacked gate dielectric layers; metal electrodes are sputtered or evaporated on the three annealed stacked gate dielectric layers to form an MOS device structure and manufacturing is completed. The gate dielectric thin film manufactured through the method has the advantages of being high in dielectric constant, low in interface state density, high in carrier migration rate and the like.

The invention relates to a device for eliminating flammable gas in a closed environment. The device comprises a heat production component, a diversion shield and two fixing plates, wherein the heat production component comprises a rectangular box body and catalyzing boxes; the upper side and the lower side of the rectangular box body have an opened structure; air enters the rectangular box body through an opening in a lower bottom surface from bottom to top; bearing structures for placing the catalyzing boxes are distributed inside the rectangular box body; catalyzing balls are arranged in the catalyzing boxes; the diversion shield has an overall shield structure consisting of a diameter-changed body and a diversion body; one bottom edge of the diameter-changed body on the diversion shield is hinged with one side at the upper end of the rectangular box body, so that the whole device can be opened and closed, and the catalyzing boxes can be assembled and replaced; the side faces of the rectangular box body in both side directions of an air outlet of the diversion shield is provided with one fixing plate respectively; and the device is integrally arranged on a vertical wall surface or a fixed object through the fixing plates. The device can reliably and effectively eliminate the flammable gas in the closed space environment.

The embodiments of the present application disclose a data processing method, device and device, which belong to the field of cloud technology-artificial intelligence services. The method includes: acquiring a sample data set, where the sample data set includes sample interest degrees of at least two sample objects and a distinguishing parameter used to distinguish the at least two sample objects, and extracting the predicted attribute feature vectors of the at least two sample objects by using a recommendation model, According to the prediction and recognition of the predicted attribute feature vector, the predicted interest degree of at least two sample objects is obtained, and the recommendation model is adjusted according to the predicted attribute feature vector, the distinguishing parameter, the predicted interest degree and the sample interest degree, and the adjusted recommendation model is used as the target recommendation model. , the degree of discrimination between the updated prediction attribute feature vectors output by the target recommendation model for at least two sample objects matches the degree of discrimination corresponding to the discrimination parameter. Through the example of the present application, the degree of discrimination of objects by the recommendation model can be improved, and accurate recommendation can be realized.