The application provides an enhanced HEMT power tube device and a preparation method thereof, wherein a four-layer
composite structure of a GaN protection-charge regulation layer, an AlN first
etching stop layer, a P-type GaN main body layer and a P-type AlGaN top layer
barrier layer is sequentially arranged from bottom to top, the P-type AlGaN top layer
barrier layer is used to increase the
Schottky barrier height, inhibit the positive
forward current of the gate and improve the
gate voltage resistance; the P-type GaN main body layer is used to realize the enhanced characteristics of the device by depleting the two-dimensional
electron gas below, and the
threshold voltage is controlled; the Al-F strong
bond energy characteristics are used in the AlN first
etching stop layer to realize
etching self-stop, and the etching damage to the AlGaN
barrier layer is reduced by the
joint action of the GaN protection-charge regulation layer; the GaN protection-charge regulation layer is used to reduce the interface
state density, reduce the dynamic on-resistance and reduce the occurrence of current collapse, and meanwhile, the gate edge
electric field distribution is smoothed, and the
breakdown voltage is improved. In addition, a first
passivation layer, a
source field plate, a second
passivation layer and a floating field plate can be further formed, and the GaN protection-charge regulation layer is used to jointly act to relieve the
electric field concentration, improve the
voltage resistance and reliability of the gate.