SiC-based MIS device and preparation method thereof

Abstract

The invention relates to a SiC-based MIS device and a preparation method thereof. The method comprises the following steps: preparing a gallium oxide nanosheet on a sapphire substrate; growing an n-type lightly-doped SiC gate dielectric layer on the n-type heavily-doped SiC layer; preparing a bottom gate electrode on one side, far away from the n-type lightly-doped SiC gate dielectric layer, of the n-type heavily-doped SiC layer; transferring the gallium oxide nanosheet on the sapphire substrate to the n-type lightly doped SiC gate dielectric layer; respectively preparing a source electrode and a drain electrode at two ends of the gallium oxide nanosheet; and carrying out annealing treatment on the source electrode, the drain electrode, the gallium oxide nanosheet, the n-type lightly-doped SiC gate dielectric layer, the n-type heavily-doped SiC layer and the bottom gate electrode to obtain the SiC-based MIS device. The SiC-based MIS device prepared by the method has good grid control capability, heat dissipation performance is improved, voltage endurance capability is enhanced, the preparation method is low in cost, and the prepared device is excellent in performance, environment-friendly and capable of being produced repeatedly.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a SiC-based MIS device and a preparation method thereof. Background technique [0002] Power semiconductor devices have a wide range of applications, and have broad prospects in 5G communications, smart grids, high-speed rail transit, new energy vehicles, consumer electronics and other fields. As the traditional Si-based power devices are gradually approaching their theoretical limit value, the provision of power density has been exhausted. The third-generation wide bandgap semiconductors represented by GaN and SiC have wider bandgap and higher strike The advantages of field strength and lower energy loss have brought vitality to the power semiconductor industry. However, SiC and GaN are currently facing some problems, such as the poor conductivity of the substrate when the doped bandgap energy increases, and the high cost of single crystal preparation. [0003] In ...

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Problems solved by technology

[0004] However, the method of mechanically exfoliating a single crystal to obtain a thin gallium oxide layer still has shortcomings such as poor repeatability and being affected by point defects in the single crystal.

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